Metal nitride material for thermistor, method for producing the same, and thin-film thermistor sensor

Abstract

Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1−vVv)xAly(N1−wOw)z (where 0.0<v<1.0, 0.70≦y / (x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and “M” is one or two elements selected from Ti and Cr. The method includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-V—Al alloy sputtering target, wherein “M” is one or two elements selected from Ti and Cr.

Description

technical field [0001] The present invention relates to a metal nitride material for a thermistor that can be directly formed on a thin film or the like under non-firing conditions, a method for producing the same, and a thin film thermistor sensor. Background technique [0002] Thermistor materials used in temperature sensors etc. require a high B constant for high precision and high sensitivity. Conventionally, such thermistor materials are generally transition metal oxides such as Mn, Co, and Fe (refer to Patent Documents 1 to 3). In addition, these thermistor materials require heat treatment such as firing at 550° C. or higher in order to obtain stable thermistor characteristics. [0003] And, in addition to the thermistor material composed of the above-mentioned metal oxide, for example, in Patent Document 4, it is proposed that the general formula: M x A y N z (Wherein, M represents at least one of Ta, Nb, Cr, Ti and Zr, and A represents at least one of Al, Si and ...

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Problems solved by technology

In addition, the thermistor material has a B constant of about 500 to 3000K in the examples of the Ta-Al-N-based material, but there is no description about heat resistance, and the thermal stability of the nitride-based material is reliable. gender ambiguity

[0013] In addition, the Cr-N-M-based material of Patent Document 5 is a material with a small B constant of 500 or less, and if heat treatment at 200°C to 1000°C is not performed, heat resistance within 200°C cannot be ensured, so there is a problem that it cannot Problems in Realizing Thin-Film Thermistor Sensors Directly Formed on Thin Films

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