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Polishing method and polishing apparatus

一种研磨方法、研磨装置的技术，应用在研磨装置、研磨机床、磨削机床的部件等方向，能够解决无法判断再研磨、无法获得错误晶片膜厚测定数据等问题，达到避免废弃处置的效果

Active Publication Date: 2015-07-29
EBARA CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, measurement data related to the film thickness of the wrong wafer cannot be obtained, and it is impossible to judge whether regrinding should be performed

Method used

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  • Polishing method and polishing apparatus
  • Polishing method and polishing apparatus

Examples

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Embodiment Construction

[0056] Embodiments of the present invention will be described below with reference to the accompanying drawings. figure 1 It is a figure which shows the grinding|polishing apparatus which concerns on embodiment of this invention. Such as figure 1 As shown, the grinding device has a substantially rectangular housing 1, and the inside of the housing 1 is divided into a loading / unloading unit 2, a grinding unit 3, and a cleaning unit 4 by partition walls 1a, 1b. The polishing apparatus has an operation control unit 5 that controls wafer processing operations.

[0057] The loading / unloading section 2 has a front loading section 20 on which a substrate cassette storing a plurality of wafers (substrates) is placed. On the loading / unloading section 2, a traveling mechanism 21 is laid along the arrangement of the front loading section 20, and a transfer robot (loader) 22 is provided on the traveling mechanism 21 movable in the direction in which the substrate cassettes are arranged....

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PUM

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Abstract

A polishing method and a polishing apparatus for performing a measurement of a film thickness of a substrate, such as a wafer, if an error has occurred during polishing of the substrate. The polishing method includes polishing a plurality of substrates, measuring a film thickness of at least one substrate, which has been designated in advance, of the plurality of substrates that have been polished, and if a polishing error has occurred during polishing of any one of the plurality of substrates, measuring a film thickness of that substrate.

Description

technical field [0001] The present invention relates to a polishing method and a polishing device for polishing a substrate such as a wafer, and more particularly to a polishing method and a polishing device for measuring the film thickness of the substrate after polishing the substrate. Background technique [0002] In semiconductor device manufacturing plants, it is required to increase the throughput for the purpose of improving the operating efficiency of polishing devices. The polishing device has a film thickness measuring device for measuring the film thickness of the polished wafer to determine whether the wafer has been polished correctly. Since this film thickness measurement takes a considerable amount of time, the film thickness is measured only for wafers designated in advance among all wafers. For example, only the 1st wafer, the 5th wafer, and the 10th wafer are conveyed to the film thickness measuring device, and the film thickness is measured by the film th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/10B24B37/005H01L21/304H01L21/67
CPCB24B37/042B24B49/00H01L21/67219H01L21/67253B24B37/013B24B49/16H01L22/12B24B49/04H01L21/304H01L22/26H01L21/30625
Inventor 鸟越恒男大泷裕史
Owner EBARA CORP
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