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All-solid-state photoelectric conversion device and its preparation method

A photoelectric conversion, all-solid-state technology, applied in photovoltaic power generation, electrical components, semiconductor devices, etc., can solve the problems of difficult preparation, high cost, and low conversion efficiency of the intermediate layer, and achieve simplified preparation process, reduced preparation cost, and improved contact performance effect

Inactive Publication Date: 2017-07-25
NORTHWESTERN POLYTECHNICAL UNIV
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Problems solved by technology

[0010] To address TiO in current metal-semiconductor-metal structures 2 Due to the problems of low conversion efficiency, difficult preparation and high cost of the intermediate layer, the present invention proposes an all-solid-state photoelectric conversion device and its preparation method

Method used

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  • All-solid-state photoelectric conversion device and its preparation method

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Embodiment 1

[0066] This embodiment is a photoelectric conversion device with a metal-semiconductor-metal structure. The photoelectric conversion device has a Zn-ZnO-Ag structure, specifically: the lower layer of the photoelectric conversion device is a Zn sheet, the middle layer is a ZnO thin film, and the upper layer is an Ag thin film deposited on the ZnO thin film. The ZnO thin film is hole-shaped and is formed by anodic oxidation on the lower Zn sheet.

[0067] The Zn sheet is a current-collecting layer of a photoelectric conversion device with an all-solid Zn-ZnO-Ag structure, the ZnO thin film is a heterogeneous layer, and the Ag thin film is a photoresponsive layer.

[0068] The ZnO thin film presents blue-black holes with a diameter of 30-100 nm and a thickness of 2.6 μm.

[0069] The present invention also proposes a method for preparing a photoelectric conversion device with a Zn-ZnO-Ag structure, and the specific preparation process is as follows:

[0070] Step 1: Zn sheet pr...

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Abstract

An all-solid-state photoelectric conversion device and a preparation method thereof. The photoelectric conversion device is of a Zn-ZnO-Ag structure. A lower layer of the photoelectric conversion device is a Zn sheet, a middle layer is a ZnO film, and an upper layer is a Ag film deposited on the ZnO film. The ZnO film is poriform, and is generated on the Zn sheet located at the lower layer by anodizing. The ZnO film is black blue poriform, the diameter is 30 to 100nm, and the thickness is 2.6 to 5.0[mu]m. Low-cost anodizing technology is adopted to realize preparation of a heterogeneous layer, through AG film modification, an all-solid-state photoelectric conversion device having sunlight response is obtained, and the method provides possibilities of use of the photoelectric conversion device under various conditions and large-scale production, and thus can alleviate energy pressure.

Description

technical field [0001] The invention belongs to a photoelectric energy conversion device, in particular to an all-solid-state photoelectric conversion device with a metal-semiconductor-metal structure, which can realize the collection and conversion of solar energy. Background technique [0002] In order to realize the idea of ​​using solar energy to provide electric energy for human beings, the research and development of photoelectric conversion devices has always been a hot research topic. All-solid-state metal-semiconductor conversion devices have attracted much attention because of their simple structure, high sensitivity, and ability to effectively break through the limit of conversion efficiency. The working principle of the metal-semiconductor all-solid-state photoelectric conversion device is: the surface of the nanostructured metal is illuminated to generate surface plasmons, and the surface plasmons are excited to generate high-energy hot electrons, the energy of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/18
CPCH01L31/0296H01L31/1828Y02E10/543Y02P70/50
Inventor 陈福义何丽荣
Owner NORTHWESTERN POLYTECHNICAL UNIV
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