Electrochemical polishing device and method

A polishing device and electrochemical technology, applied in the field of integrated circuit manufacturing, can solve the problems of different removal rate and polishing uniformity, and achieve the effect of compact structure and improved processing efficiency
CN104862772AActive Publication Date: 2015-08-26ACM RES SHANGHAI
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
ACM RES SHANGHAI
Publication Date
2015-08-26

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Abstract

The invention discloses an electrochemical polishing device. The device comprises a wafer chuck and a nozzle. The wafer chuck is provided with multiple wafer grooves. The multiple wafer grooves are uniformly distributed between the circle center of the wafer chuck and the outer edge of the wafer chuck. The diameters of the wafer grooves are equal, circle centers of the multiple wafer grooves are distributed on the concentric circles utilizing the wafer chuck circle center as a center, and the circle centers of the wafer grooves are located on the midpoint of the radius from the wafer chuck circle center to the outer edge of the wafer chuck. The wafer chuck carries out linear movement relatively to the nozzle. The invention also provides an electrochemical polishing method utilizing the electrochemical polishing device. The used electrochemical polishing device comprises the wafer chuck and the nozzle. In wafer polishing, the wafer chuck clamping multiple wafers carries out linear movement relatively to the nozzle and the movement range is from the wafer chuck circle center to the outer edge of the wafer chuck or is in a wafer groove diameter range.
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Description

technical field

[0001] The invention relates to the field of integrated circuit manufacturing, in particular to an electrochemical polishing device and method. Background technique

[0002] In the integrated circuit manufacturing process, chemical mechanical polishing (CMP) technology has been widely used in the interlayer global planarization of single crystal silicon substrates and multilayer metal interconnection structures. Chemical mechanical polishing can polish and planarize the metal layer formed on the non-recessed areas of the dielectric material. Although chemical mechanical polishing can only polish the metal layer without affecting the dielectric layer, however, due to its strong mechanical force, chemical mechanical polishing will have some harmful effects on the structure of integrated circuits, especially with very large scale integrated circuits and With the rapid development of ultra-large-scale integrated circuits, copper and low-K or ultra-low-K dielectr...

Claims

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