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NBT-BT crystal piezoelectric film and piezoelectric stacking structure comprising the same

A piezoelectric body and crystal technology, applied in the field of piezoelectric laminated structures, can solve the problem of undisclosed depolarization temperature and the like

Inactive Publication Date: 2015-08-26
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent Document 2 to Patent Document 6 do not disclose the depolarization temperature Td

Method used

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  • NBT-BT crystal piezoelectric film and piezoelectric stacking structure comprising the same
  • NBT-BT crystal piezoelectric film and piezoelectric stacking structure comprising the same
  • NBT-BT crystal piezoelectric film and piezoelectric stacking structure comprising the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment A1

[0116] In Example A1, the Figure 1E The piezoelectric stack structure shown. [(Na, Bi) contained in the piezoelectric laminate structure of Example A1 0.93 Ba 0.07 ] TiO 3 Layer 15 has an a-axis length of 0.392 nanometers, and a c-axis length of 0.410 nanometers. The piezoelectric multilayer structure of Example A1 was produced as follows.

[0117] A platinum layer having a (111) orientation and a thickness of 100 nm was formed on the surface of a silicon single crystal substrate having a (100) orientation by RF magnetron sputtering. This platinum layer functions as the metal electrode layer 12 .

[0118] The sputtering conditions of the platinum layer are described below.

[0119] Target: Platinum metal

[0120] Atmosphere: Argon

[0121] RF output power: 15W

[0122] Substrate temperature: 300 degrees Celsius

[0123] Before forming the platinum layer, a titanium layer having a thickness of 2.5 nm was formed on the surface of the silicon single crystal substrate t...

Embodiment A2

[0161] Except La 1+y Ni 1-y o 3 Except that layer 13 was formed under the condition of the substrate temperature of 275 degrees centigrade, [(Na, Bi) was produced in the same manner as in Example A1. 1-x Ba x ] TiO 3 Layer 15.

Embodiment A3

[0163] Except La 1+y Ni 1-y o 3 Except that layer 13 was formed under the condition of the substrate temperature of 225 degrees centigrade, [(Na, Bi) was produced in the same manner as in Example A1. 1-x Ba x ] TiO 3 Layer 15.

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Abstract

The present invention provides an NBT-BT film having a higher polarization-disappearance temperature. The present invention is a [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a (001) orientation only. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a-axis length of not less than 0.390 nanometers and not more than 0.395 nanometers. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has c-axis length of not less than 0.399 nanometers and not more than 0.423 nanometers (where x represents a value of not less than 0 and not more than 1). The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a polarization-disappearance temperature of not less than 389 degrees Celsius.

Description

technical field [0001] The present invention relates to an NBT-BT crystal piezoelectric film and a piezoelectric laminate structure comprising it. Background technique [0002] Perovskite composite oxide [(Na, Bi) 1-x Ba x ] TiO 3 (hereinafter referred to as "NBT-BT") is currently being researched and developed as a lead-free ferroelectric material. [0003] Patent Document 1 discloses an NBT-BT film having a high depolarization temperature Td. Specifically, Patent Document 1 discloses that: by RF magnetron sputtering at a temperature of 650 degrees Celsius, formed on Na x La 1-x+y Ni 1-y o 3-x (1-α)(Na, Bi, Ba)TiO on the layer 3 -αBiQO 3 layer (Q=Fe, Co, Zn 0.5 Ti 0.5 , or Mg 0.5 Ti 0.5 ) has a depolarization temperature Td of about 180°C to 250°C. (1-α)(Na, Bi, Ba)TiO 3 -αBiQO 3 Layers have only (001) orientation. Na x La 1-x+y Ni 1-y o 3-x A layer was formed on a Pt film with (111) orientation by RF magnetron sputtering at a temperature of 300 degrees...

Claims

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Application Information

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IPC IPC(8): H01L41/187B41J2/14
CPCG01P3/02B32B2307/20H01L41/1871B32B9/005H01L41/113G01P9/04B32B2307/704C23C14/088G01C19/5607C30B25/06C30B29/22H10N30/204H10N30/8542H10N30/8561
Inventor 田中良明桥本和弥张替贵圣足立秀明藤井映志
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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