Light emitting diode (LED) epitaxial structure and preparation method therefor
A technology of epitaxial structures and holes, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as current congestion, achieve the effect of improving the uniformity of light emission and solving current congestion
Inactive Publication Date: 2015-09-09
FOCUS LIGHTINGS SCI & TECH
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Problems solved by technology
The hole expansion layer plays a role in helping current expansion in LED devices, and solves the problem of current congestion
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[0033] The present invention will be described in detail below in conjunction with specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.
[0034] Such as figure 2 As shown, the LED epitaxial structure according to one embodiment of the present invention sequentially includes a substrate 100, an N-type GaN layer 103, an InGaN / GaN quantum well layer 104, an electron blocking layer 105, a P-type GaN layer 106, and a contact layer 108 from bottom to top; A hole expansion layer 107 is also grown between the P-type GaN layer 106 and the contact layer 108, and the hole expansion layer 107 is unintentionally doped Al x Ga (1-x) N layer 107, the Al x Ga (1-x) The value range of x in the N layer 107 is 0.05~0.20, the Al x Ga (1-x) The thickn...
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Abstract
The invention provides a light emitting diode (LED) epitaxial structure and a preparation method therefor. The LED epitaxial structure sequentially comprises a substrate, an N-type GaN layer, an InGaN / GaN quantum well layer, an electron barrier layer, a P-type GaN layer and a contact layer from bottom to top. A hole extension layer also grows between the P-type GaN layer and the contact layer. The hole extension layer is an unintentionally doped AlxGa(1-x)N layer, the value range of x in the AlxGa(1-x)N layer is of from 0.05-0.20, and the thickness range of the AlxGa(1-x)N layer is of 10-40nm. According to the LED epitaxial structure, the AlxGa(1-x)N layer has a high energy gap, and holes flowing out from an anode are uniformly dispersed by the AlxGa(1-x)N layer and then flow in the InGaN / GaN quantum well layer for combining with electrons to generate photons, so that the uniformity of luminance is improved, and a problem of current jam of an LED chip can be solved without requiring a complex chip technology.
Description
technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to an LED epitaxial structure and a preparation method thereof. Background technique [0002] LED lighting is a lighting fixture made of the fourth-generation green light source LED. LED is called the fourth-generation lighting source or green light source. It has the characteristics of energy saving, environmental protection, long life, and small size. It can be widely used in various indications, displays, decorations, backlights, general lighting and urban night scenes. [0003] Such as figure 1 As shown, the epitaxial structure of the blue-white light LED in the prior art includes a substrate 300, a buffer layer 301, an unintentionally doped GaN layer 302, an N-type GaN layer 303, an InGaN / GaN quantum well layer 304, and electron barrier layer 305 , p-type GaN layer 306 , and contact layer 307 . Then use the ICP process to etch a part of the surfa...
Claims
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Login to View More IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/14H01L33/0075
Inventor 冯猛陈立人刘恒山
Owner FOCUS LIGHTINGS SCI & TECH