Unlock instant, AI-driven research and patent intelligence for your innovation.

Matching circuit of inverse-F type power amplifier

A technology for matching circuits and power amplifiers, applied in power amplifiers, improving amplifiers to reduce temperature/power supply voltage changes, etc., can solve the problem of high cost, and achieve the effects of small size, adjustable bandwidth and high stability

Inactive Publication Date: 2015-09-09
徐园园
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional RF power amplifiers are mostly based on the GaAs process, but because they are not compatible with the traditional silicon process, their cost is high. In recent years, more and more researches have been conducted on the heterojunction bipolar silicon germanium process that is compatible with the silicon process And applications, although the linearity of the nonlinear power amplifier is not good enough, it still plays an important role in the design of the power amplifier, and it is especially suitable for nonlinear modulation systems that do not require high linearity such as Gaussian frequency shift keying

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Matching circuit of inverse-F type power amplifier
  • Matching circuit of inverse-F type power amplifier
  • Matching circuit of inverse-F type power amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0010] combine figure 1 , the present invention is an inverse Class F power amplifier matching circuit, and a matching circuit of a certain band is selected as an example for description. The new inverse Class F power amplifier matching circuit includes an input port (Port1), an output port (Port2), three LC resonant units, an inductor, a capacitor, and a resistor; port 1 is connected to one end of the L1C1 resonant unit, and L1C1 resonates The other end of the unit is connected to one end of the L2C2 resonance unit; the other end of the L2C2 resonance unit is connected to port 2; one end of the resistor R is connected to port 2, and the other end is connected to the ground; one end of the inductor L is connected to port 2 ;The other end is connected to the L3C3 resonance unit; the other end of the L3C3 resonance unit is connected to one end of the capacitor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a matching circuit of an inverse-F type power amplifier. The key of an F type radio frequency power amplifier lies in a matching circuit thereof. Because non-ideal characteristic that second-order impedance of a traditional LC output matching circuit is not zero, the invention provides an improved output LC matching circuit and the matching circuit suitable for the inverse-F type power amplifier. The matching circuit of the inverse-F type power amplifier of the invention can be widely applied in a system which needs the inverse-F type power amplifier.

Description

technical field [0001] The invention relates to an inverse class F power amplifier matching circuit, in particular to an inverse class F power amplifier matching circuit. It belongs to the field of electronics and communication. Background technique [0002] With the development of microwave and millimeter wave communication, radar and other systems, especially the development of mobile handheld wireless communication terminals, satellite mobile communication terminals, military and civilian multi-mode and multi-channel communication system terminals, the requirements for devices in the system are becoming more and more stringent. Traditional RF power amplifiers are mostly based on the GaAs process, but because they are not compatible with the traditional silicon process, their cost is high. In recent years, more and more researches have been conducted on the heterojunction bipolar silicon germanium process that is compatible with the silicon process And applications, altho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F3/20
Inventor 徐园园
Owner 徐园园