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Device and integrated circuit for performing signal driving by means of mosfet

A signal driving and signal technology, applied in logic circuits, electrical components, electronic switches, etc., to achieve the effect of effective resonance suppression

Active Publication Date: 2017-12-22
MEDIATEK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, problems due to the existing design of the drive unit may arise in some cases
For example, the operation of drive units implemented in accordance with prior art can be hampered by the characteristics of certain components in the drive unit

Method used

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  • Device and integrated circuit for performing signal driving by means of mosfet
  • Device and integrated circuit for performing signal driving by means of mosfet
  • Device and integrated circuit for performing signal driving by means of mosfet

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Embodiment Construction

[0024] Certain terms are used throughout the description and claims below to refer to particular components. Manufacturers may refer to components by different names, as those skilled in the art appreciate. This document does not intend to distinguish between parts of the same name but different functions. In the following description and claims, the terms "comprises" and "comprises" are used in an open style, and thus should be interpreted to mean "including, but not limited to". Also, the term "coupled" is intended to mean an indirect or direct electrical connection. Thus, if a device couples to another device, that connection may be through a direct electrical connection or through an indirect electrical connection via other devices and connections.

[0025] figure 1 is a schematic diagram of an apparatus 100 for performing signal driving by means of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) according to an embodiment of the present invention. For exa...

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Abstract

The present invention provides a device and an integrated circuit for performing signal driving by means of MOSFETs. The device includes a PMOSFET coupled between a predetermined voltage level and a terminal for selectively driving a signal through the terminal; an NMOSFET coupled between the predetermined voltage level and the terminal for selectively driving the signal; and another An NMOSFET coupled between another predetermined voltage level and the terminal for selectively driving the signal; wherein the PMOSFET, the NMOSFET, and the other NMOSFET do not simultaneously drive the signal. Through the above solutions, the present invention can effectively suppress resonance.

Description

【Technical field】 [0001] The present invention relates to the performance control of integrated circuits (Integrated Circuits, IC), for example, the I / O signal control of multiple input / output (I / O) terminals of a semiconductor chip and the resonance control of these I / O terminals and some internal terminals thereof, More particularly, it relates to devices and integrated circuits for performing signal driving by means of MOSFETs. 【Background technique】 [0002] According to the prior art, an existing memory control circuit for controlling a memory may include a set of terminals, for example, some memory input / output (I / O) terminals, wherein the memory I / O terminals may be used in an existing memory control The memory I / O signal is sent or received between the circuit and the memory mentioned above. More specifically, the existing memory control circuit may include a driving unit for outputting an output signal through a memory I / O terminal. However, problems due to the ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/06
CPCH03K17/687H03K19/018521H03K19/0948
Inventor 陈尚斌
Owner MEDIATEK INC