Forming method of MEMS semiconductor device

Abstract

The invention provides a forming method of an MEMS semiconductor device. The forming method comprises the following steps: placing a first aluminum bonding pad and a second aluminium bonding pad on a first semiconductor substrate; providing a second semiconductor substrate, forming a connection structure on the second semiconductor substrate, wherein the connection structure is corresponding to the first aluminum bonding pad one by one; connecting the first aluminum bonding pad and the connection structure so as to bonding the second semiconductor substrate and the first semiconductor substrate; cutting off part of the second semiconductor substrate, wherein the cut position of the second semiconductor substrate is corresponding to the second aluminum bonding pad; washing the second aluminum bonding pad by deionized water; etching the cut part of the second semiconductor substrate by a dry process etching method so as to break the second semiconductor from the cut position to expose the second aluminum bonding pad; and washing the first semiconductor substrate and the second semiconductor. The provided technical scheme avoids the phenomenon that the particles are adhered on the surface of the second aluminum bonding pad.

Description

technical field [0001] The invention relates to a semiconductor technology, in particular to a method for forming a MEMS semiconductor device. Background technique [0002] In the manufacturing process of MEMS semiconductor devices, it often involves bonding two semiconductor substrates formed with semiconductor device structures together to form an integrated circuit chip with a 3D structure, including: [0003] refer to figure 1 As shown, a first semiconductor substrate 100 is provided, wherein the first semiconductor substrate 100 includes: a first aluminum pad 110 and a second aluminum pad 120, the surface of the first semiconductor substrate 100, the first An insulating layer 300 is also formed on the aluminum pad 110 and the second aluminum pad 120 . Wherein, a device layer (not shown) is formed in the first semiconductor substrate 100, and the device layer may have a partial structure of CMOS, inductance, capacitance, or semiconductor sensor, etc., and the first alu...

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Problems solved by technology

[0011] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a method for forming a MEMS semiconductor device, which is used to solve the problem that particles are generated when cutting the second semiconductor substrate in the prior art, and the particles will adhere to the The surface of the second aluminum pad, difficult to remove the problem

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