A kind of oblique hole etching method
A technology of oblique hole and etching gas, which is applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problem of difficult control of etching rate and deposition rate, reduce the deposition rate of the top area of the through hole, and rough side walls of the through hole The problems such as the increase of density can be achieved to shorten the etching time, improve the shape and enhance the protection effect.
Active Publication Date: 2019-03-12
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology
[0006] However, in practical applications, since the ratio of the etching rate to the deposition rate is not easy to control, it is easy to cause the etching rate in the top area of the via hole to be greater than the deposition rate, resulting in the formation of a bowl-shaped (Bowing) shape on the top of the via hole; at the same time, in the When the opening size at the top of the via hole is small, due to the barrier of the mask, the flow field static area will be formed on the top of the via hole, which will reduce the deposition rate at the top area of the via hole and further increase the Bowing morphology of the top area of the via hole, as shown in image 3 As shown, it will also increase the roughness on the sidewall of the via
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[0031] In order to make those skilled in the art better understand the technical solutions of the present invention, the oblique hole etching method provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0032] The inclined hole etching method provided by the first embodiment of the present invention is used for etching inclined holes with an inclined angle of less than 90° (the inclined angle is preferably in the range of 70° to 85°) on a silicon wafer. It should be noted that the above inclination angle is a supplementary angle of the angle between the side wall and the bottom surface, that is, the inclination angle is equal to 180° minus the angle between the side wall and the bottom surface. It is easy to understand that the included angle between the side wall and the bottom surface is an obtuse angle.
[0033] Before etching the slanted holes, a photoresist is firstly coated on the surface of the silicon wafer, ...
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The invention relates to a method for etching inclined hole. The method includes the step of etching a silicon chip to a first preset depth by employing a first bias power capable of improving the ratio of deposition rate to etching rate in order to reduce the thickness of a bowl shape in the top of the sidewall of the inclined hole (S1), and employing a second bias power to continue etch the silicon chip to a second preset depth, wherein the second bias power is greater than the first bias power to increase the etching rate. An inclined hole with small bowl-shaped top can be itched in a short time can be etched by employed the method, thereby improving the efficiency of etching inclined holes and improving the shape of the sidewall of the inclined holes.
Description
technical field [0001] The present invention relates to the technical field of semiconductor processing, in particular, to a method for etching an oblique hole. Background technique [0002] Through Silicon Via (TSV) technology is a chip interconnection technology, which is used to realize the circuit conduction between chips and chips, between wafers and wafers, and between chips and wafers. . TSV technology can extend the chip volume in the three-dimensional direction, thereby reducing the external size of the packaged product and increasing the structural density of the packaged product, thereby achieving more functions and superior performance while maintaining a lower cost. [0003] The TSV packaging process generally includes the following steps: ① wafer thinning, ② bonding technology, ③ through-hole fabrication, ④ electrical isolation layer coverage, ⑤ barrier layer removal, ⑥ metallization. Among them, the production of the through hole is a very critical process....
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IPC IPC(8): H01L21/768H01L21/3065
Inventor 周娜蒋中伟
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD