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n-CdSxSe1-x film/graphene schottky junction solar cell

A technology of n-cdsxse1-x and solar cells, which is applied in the field of solar cells, can solve the problems of high cost of Schottky solar cells, and achieve the effects of low cost, simple preparation method, and high power generation efficiency

Active Publication Date: 2015-09-30
HUAWEI TEHCHNOLOGIES CO LTD
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  • Claims
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AI Technical Summary

Problems solved by technology

[0004] For above-mentioned deficiencies in the prior art, the object of the present invention is to provide a kind of n-CdS x Se 1-x Thin film / graphene Schottky junction solar cells, solving the problem of high cost of Schottky solar cells

Method used

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Embodiment 2

[0016] In Embodiment 2, a stainless steel sheet is used as the substrate 1, and the Mo back electrode 2 is deposited on the substrate 1 by electron beam evaporation process. Deposit a layer of Cd film on the back electrode 2 by evaporation process, and then anneal in Se, S atmosphere to form CdS 0.6 Se 0.4 Absorbing layer semiconductor thin film 3. CdS by sputtering x Se 1-x Depositing patterned Al on the film successively 2 o 3 Insulating layer 4 and gate line Au front electrode 5, and make it have through hole 7. Then the graphene film 6 is tiled on the above-mentioned grid line electrode 5, and through the through hole 7 and the CdS 0.6 Se 0.4 semiconductor thin film 3 contacts, and then in HNO 3 Treating for 2 minutes under the atmosphere to realize modification and modification of graphene, finally forming the Schottky junction thin-film solar cell device involved in the present invention.

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Abstract

The invention discloses an n-CdSxSe1-x film / graphene schottky junction solar cell, which comprises a substrate, a back electrode, a semiconductor film layer, an insulating layer, a front electrode and a grapheme layer superimposed sequentially, wherein through holes are formed in the insulating layer and the front electrode; the grapheme layer is contacted with the surface of the semiconductor film layer through the through holes to form a schottky junction; the semiconductor film layer is an n type CdSxSe1-x semiconductor film with the formula as shown in the figure. The solar cell has the advantages that the preparation method is simple, the cost is low, the incident light is fully absorbed, the generating efficiency is high, and the electrode is not easy to conduct through utilizing the CdSxSe1-x semiconductor film and the grapheme to form a solar cell device with a schottky junction structure.

Description

technical field [0001] The invention relates to a solar cell, in particular to an n-CdS x Se 1-x Thin film / graphene Schottky junction solar cells. Background technique [0002] The Schottky junction refers to a structure with rectification characteristics formed due to the difference in work function between the metal and the semiconductor material. There is a built-in electric field in the Schottky junction, which, like the p-n junction, can also be used to separate photogenerated electron-hole pairs. Therefore, the Schottky junction can also be applied to the field of solar power generation. Moreover, compared with traditional p-n junction solar cells, the preparation method of Schottky junction solar cells is much simpler, and the preparation cost is relatively low, which has its unique advantages in reducing the cost of photovoltaic power generation. [0003] In the traditional Schottky junction solar cell structure, the metal layer itself will absorb a considerable ...

Claims

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Application Information

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IPC IPC(8): H01L31/07H01L31/0296
CPCH01L31/02966H01L31/07Y02E10/50
Inventor 张磊钱斌贾淑婷韩志达
Owner HUAWEI TEHCHNOLOGIES CO LTD
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