Co2VGa/PbS interface half-metallic preparation technology

A preparation process and semi-metallic technology, applied in the field of semi-metallic preparation process at Co2VGa/PbS interface, can solve problems such as backward method

Inactive Publication Date: 2015-09-30
XUCHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the existing process method is backward and needs to be improved

Method used

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  • Co2VGa/PbS interface half-metallic preparation technology
  • Co2VGa/PbS interface half-metallic preparation technology
  • Co2VGa/PbS interface half-metallic preparation technology

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Embodiment Construction

[0019] In order to facilitate the understanding of the present invention, the present invention will be described in more detail below in conjunction with the accompanying drawings and specific embodiments. Preferred embodiments of the present invention are given in the description and drawings, but the present invention can be implemented in many different forms and is not limited to the embodiments described in the description. Rather, these embodiments are provided so that a thorough and complete understanding of the present disclosure is provided.

[0020] It should be noted that when a certain element is fixed to another element, it includes directly fixing the element to the other element, or fixing the element to the other element through at least one other element in the middle. When an element is connected to another element, it includes directly connecting the element to the other element, or connecting the element to the other element through at least one intervenin...

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Abstract

The invention discloses a Co2VGa/PbS interface half-metallic preparation technology, which comprises the following steps of (1) building interface structures; (2) carrying out structure optimization on four interfaces, wherein during the optimization process, in order to close to practice, atoms in five atom layers closest to the interfaces are allowed to be subjected to location relaxation, and other atoms are fixed in position; (3) calculating physical quantities such as state density, magnetic moment and surface energy of the optimized interface structures; (4) analyzing the state density, the magnetic moment, spin polarization and stability of the interface structures; (5) through analyzing and comparing graphics and forms in the step (4), obtaining a half-metallic interface thin film with 100 percent spin polarization and stable structure.

Description

technical field [0001] The present invention relates to a Co 2 VGa / PbS interface semi-metallic preparation process. Background technique [0002] Many Heusler alloys have been found to have semimetallic properties, where one spin channel is metallic and the other is semiconducting or insulating, thereby exhibiting 100% spin polarization. This unique characteristic makes this kind of Heusler alloy material the best spin-polarized electron injection source for semiconductors. Therefore, in recent years, the study of the electronic structure and properties of heterojunctions composed of Heusler alloys and semiconductors has aroused great interest of many researchers. In addition, the lattice structures and lattice constants of many Heusler alloys and common semiconductors are easily matched, so these Heusler alloys are experimentally easy to grow on common semiconductors. However, it must be mentioned that although these Heusler-type half-metallic ferromagnets have good latt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/10
Inventor 韩红培
Owner XUCHANG UNIV
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