A magneto-resistive element with three-layer structure memory layer

A technology of magnetoresistance and memory layer, applied in the field of vertical magnetoresistance elements, can solve the problems of poor thermal stability and unsolved MR ratio, and can reduce damping coefficient, increase current spin polarizability, and enhance magnetocrystalline The effect of vertical anisotropy

Active Publication Date: 2017-12-15
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technical solution solves the problem of shifting the hysteresis curve of the storage layer, but does not solve the problems of low MR rate and poor thermal stability

Method used

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  • A magneto-resistive element with three-layer structure memory layer
  • A magneto-resistive element with three-layer structure memory layer
  • A magneto-resistive element with three-layer structure memory layer

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] figure 1 It is a structural schematic diagram of an MTJ element based on the present invention, which includes a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a lattice optimization layer 15 and a base layer 18 arranged adjacently in sequence from bottom to top, wherein The memory layer 14 is composed of a first memory sublayer 14a, a second memory sublayer 14c, and an insertion layer 14b between the first memory sublayer 14a and the second memory sublayer 14c, which are sequentially adjacent.

[0039] The reference layer 12 is a ferromagnetic material, the magnetization direction of the reference layer 12 is constant and the magnetic anisotropy is perpendicular to the layer surface; in the memory layer 14, the first memory sublayer 14a and the second memory sublayer 14c are ferromagnetic materials, The insertion layer 14b is a non-magnetic material, and the magnetization direction of the memory layer 14 as a whole is variable and the...

Embodiment 2

[0051] figure 2 is in figure 1 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure in the medium, including a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a lattice optimization layer 15, and a magnetic correction Layer 17 and base layer 18, wherein the memory layer 14 consists of successively adjacent first memory sublayer 14a, second memory sublayer 14c, and an insert layer between the first memory sublayer 14a and the second memory sublayer 14c 14b composition. and figure 1 The difference in device structure is that a magnetic correction layer 17 is added between the lattice optimization layer 15 and the base layer 18 .

[0052] The characteristics of the magnetic correction layer 17 are similar to those of the reference layer 12, in that the magnetization direction is constant and the magnetic anisotropy is perpendicular to the layer surface; the magnetization direction of the...

Embodiment 3

[0056] image 3 is in figure 2 A schematic diagram of the structure of an MTJ element further improved on the basis of the device structure in the medium, including a bottom electrode 11, a reference layer 12, a barrier layer 13, a memory layer 14, a lattice optimization layer 15, a spin Polarization stabilization layer 16, magnetic correction layer 17 and foundation layer 18, wherein memory layer 14 is made up of successively adjacent first memory sublayer 14a, second memory sublayer 14c and between first memory sublayer 14a and second memory Inserted layer 14b between sub-layers 14c. and figure 2 The difference in device structure is that a spin polarization stabilization layer 16 is added between the magnetic correction layer 17 and the lattice optimization layer 15 .

[0057] The spin polarization stable layer 16 has higher electron polarization conductivity, and the electron spin polarization loss rate on the Fermi level is close to zero, and the spin polarization st...

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PUM

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Abstract

The invention provides a magneto-resistor element with a three-decker memory layer. The magneto-resistor element comprises a reference layer, a barrier layer, the memory layer, a crystal lattice optimizing layer and a base layer which are sequentially adjacent to one another. The magnetization direction of the reference layer is unchanged, and the magnetic anisotropy of the reference layer is perpendicular to the layer surface. The magnetization direction of the memory layer is changed, and the magnetic anisotropy of the memory layer is perpendicular to the layer surface. The memory layer is composed of a first memory sub layer, a second memory sub layer and an inserting layer arranged between the first memory sub layer and the second memory sub layer, wherein the first memory sub layer, the second memory sub layer and the inserting layer are sequentially arranged adjacent to one another. The barrier layer is adjacent to the first memory sub layer. The crystal lattice optimizing layer is adjacent to the second memory sub layer, the crystal lattice optimizing layer is a material layer of a NaCl crystal lattice structure, and the crystal face of the crystal lattice optimizing layer is parallel to the plane of a base. The crystal lattice optimizing layer further includes at least one doping element, and the crystal lattice optimizing layer further can be of a double-decker structure. The magneto-resistor element further comprises a magnetic calibration layer and a spin polarization stable layer, and the magnetic calibration layer and the spin polarization stable layer are sequentially arranged between the base layer and the crystal lattice optimizing layer.

Description

technical field [0001] The invention relates to the field of storage devices, in particular to a vertical magnetoresistance element. Background technique [0002] Magnetic Tunnel Junction (MTJ, Magnetic Tunnel Junction) is a magnetic multilayer film composed of an insulator or a semiconductor. Under the action of a voltage across the insulating layer, its tunnel current and tunnel resistance depend on the relative magnetization of the two ferromagnetic layers. Orientation, when this relative orientation changes under the action of an external magnetic field, a large tunneling magnetoresistance (TMR) can be observed. The magnetic random access memory made by people using the characteristics of MTJ is non-volatile magnetic random access memory (MRAM, Magnetic Random Access Memory). MRAM is a new type of solid-state non-volatile memory, which has the characteristics of high-speed reading and writing, large capacity, and low power consumption. [0003] Spin Transfer Torque (ST...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12
Inventor 郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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