Monte Carlo simulation method for electronic transportation problem of n-type Si material

A technology of electronic transport and analog methods, applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., can solve problems such as insufficient accuracy of results

Inactive Publication Date: 2015-10-21
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For the simulation of small devices, the accuracy of the results measured by the above traditional experimental methods is far from enough

Method used

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  • Monte Carlo simulation method for electronic transportation problem of n-type Si material
  • Monte Carlo simulation method for electronic transportation problem of n-type Si material
  • Monte Carlo simulation method for electronic transportation problem of n-type Si material

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Embodiment Construction

[0058] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings, but it is not limited thereto. Any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention should be covered by the present invention. within the scope of protection.

[0059] The present invention provides a kind of method that uses Monte Carlo method to simulate the transport problem of electron in n-type semiconductor Si material, and specific content is as follows:

[0060] One, make brief introduction to the basic knowledge that the present invention needs to use

[0061] (1) Monte Carlo method

[0062] Monte Carlo method (referred to as MC method), its naming and development began in the mid-1940s, and it began to be applied to the calculation of nuclear reactions, but it is quite different from general mathematic...

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Abstract

The present invention discloses a Monte Carlo simulation method for the electronic transportation problem of an n-type Si material. The Monte Carlo simulation method comprises the following steps of: 1, determination of a carrier scattering mechanism and calculation of various scattering ratios under corresponding input conditions; 2, establishment of a carrier drift model and calculation of energy and a wave vector after carrier drift; 3, establishment of a carrier scattering model and selection of a scattering type; and 4, implementation of simulating an electronic transportation problem calculating program of the n-type semiconductor Si material by the Monte Carlo method. According to the present invention, an average rate and a drift mobility of the n-type Si material are simple, rapid and convenient to calculate; a series of problems of difficulty in testing, a large error and the like, which are caused by influence of the size of a semiconductor device and experiment conditions when an experimental testing method is used before, are avoided; moreover, the method has high popularization performance; and the carrier transportation or microscopic particle collision problem of other semiconductor materials also can be calculated by changing corresponding input parameters.

Description

technical field [0001] The invention belongs to the field of optical basic theory simulation and calculation research, and relates to a Monte Carlo simulation method for electron transport problems in n-type Si materials. Background technique [0002] From the discovery of Si materials to the rapid development and innovation of Si materials, there is a long history. The first generation of commercial Si transistors was manufactured by Texas Instrument in May 1954. Because Si material has the advantages of good insulating interface, good temperature stability and low cost, it has always played an important role in the microelectronics industry. Studying the carrier transport process in semiconductor materials and calculating the drift velocity and mobility will help us understand the internal structure of semiconductor materials, and then grasp the working characteristics of semiconductor devices. In the past few decades, the determination of drift velocity and mobility mos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 薛文慧陈婷黑玉明解放邱成波范志刚
Owner HARBIN INST OF TECH
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