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A pressure sensor chip based on mems technology and its preparation method

The technology of a pressure sensor and a manufacturing method is applied in the process of producing decorative surface effects, metal material coating process, piezoelectric device/electrostrictive device, etc., and can solve the problem of large chip volume, low yield and high cost. question

Active Publication Date: 2017-02-01
无锡芯感智半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thickness uniformity of the pressure sensitive film of the pressure sensor prepared by the above process is poor, the chip volume is large, the yield is low, the performance is unstable, and the cost is high

Method used

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  • A pressure sensor chip based on mems technology and its preparation method
  • A pressure sensor chip based on mems technology and its preparation method
  • A pressure sensor chip based on mems technology and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The present invention proposes a sealed gauge pressure MEMS pressure sensor chip, see figure 1 , including a P-type or N-type substrate silicon wafer 1, a shallow silicon cup 2 formed on the substrate silicon wafer 1, the depth of the shallow silicon cup 2 is 6-8 microns, and a sacrificial layer 3 is deposited in the shallow silicon cup 2 , such as a PSG sacrificial layer, the sacrificial layer 3 is released to form a pressure reference chamber. The pressure sensor chip includes a pressure-sensitive membrane formed by a 4-layer composite membrane. The composite membrane includes a silicon nitride membrane 5, a polysilicon membrane 8, a thermal oxide membrane 9, and a silicon nitride insulating layer 10. When the pressure-sensitive membrane faces a shallow silicon cup On the side, a plurality of mass blocks 6 are formed; the design of the mass blocks 6 is beneficial to prevent the phenomenon of release adhesion, and the mass blocks are located in the stress matching area...

Embodiment 2

[0034] The present invention proposes a gauge pressure MEMS pressure sensor chip, see figure 2 , the same structure and components as in Embodiment 1 will not be repeated, the difference is: through the ICP deep etching process, a gauge pressure chip pressure reference cavity 13 is formed on the substrate silicon wafer 1, and a gauge pressure sensor chip is prepared, wherein: Nitriding Silicon 4 is an ICP etch stop layer, which realizes self-stopping of corrosion.

Embodiment 3

[0036] The present invention proposes an absolute pressure MEMS vacuum pressure sensor chip, see image 3 , the silicon-glass bonding process is performed on the basis of the gauge pressure chip, and the glass 14 is bonded to the substrate silicon wafer 1 to form the absolute pressure vacuum pressure reference chamber 13, which can complete the preparation of the absolute pressure sensor chip. The same structures and components as those in Embodiments 1 and 2 will not be repeated.

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Abstract

The invention relates to a pressure sensor chip of various pressure forms based on MEMS (Micro Electro Mechanical System) technology and a manufacturing method thereof. In the manufacturing process of the pressure sensor chip, the product range is determined by means of a surface micromechanical machining process, and whether subsequent procedures are needed or not can be selected with the same surface process in order to manufacture pressure sensor chips of sealing gauge pressures, gauge pressures and absolute pressures respectively. For a large-range product, the chip size can be up to 0.6mm. A piezoresistor is a polysilicon resistor with low temperature drift and high temperature resistance. Mass blocks are designed on sensitive films, so that the phenomenon of release adhesion can be prevented, and meanwhile the overload capability of the pressure sensor can be enhanced. The mass blocks are positioned in the stress matching area of the piezoresistor, so that the sensitivity and linearity of the pressure sensor can be enhanced. The pressure sensor chip based on the MEMS technology related to the invention is simple in process, small in chip size, low in cost and high in production efficiency, temperature characteristic and static puncture resistance, and can be applied to various high temperature resistance fields.

Description

technical field [0001] The invention relates to the fields of MEMS design and semiconductor processing, in particular to a multi-pressure form pressure sensor chip based on MEMS technology and a preparation method thereof. Background technique [0002] The "2014-2019 China Sensor Market In-Depth Survey and Investment Prospect Evaluation Consulting Report" released by China Industry Information Network pointed out that in recent years, the global sensor market has maintained rapid growth, and the growth rate in 2009 and 2010 reached more than 20%. Affected by the global economic downturn, the growth rate of the sensor market fell by 5% compared with 2010, and the market size was 82.8 billion US dollars. With the gradual recovery of the global market, the global sensor market reached USD 95.2 billion in 2012 and approximately USD 105.5 billion in 2013. In the future, as the economic environment continues to improve, the market demand for sensors will continue to increase. It ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B7/02B81B7/00B81B3/00B81C1/00G01L1/20
Inventor 刘同庆
Owner 无锡芯感智半导体有限公司