Device and method for precisely testing temperature distribution of semiconductor device

Abstract

The invention discloses a device and a method for precisely testing temperature distribution of semiconductor device. The device comprises a core control module, a big and small constant current source module, a high-speed current switching module, a thermotank, a high-speed data acquisition module, an infrared thermal imaging system, an upper computer and a power supply module. The method comprises the steps of: providing an adjustable constant-temperature environment and a precise test current to a device to be detected; recording the environment temperature and obtaining a K coefficient by means of linear fitting corresponding to a positive pressure drop; heating the current so as to heat the device to be detected to a stable state, and then switching to the test current at a high speed; rapidly sampling the positive pressure drop and carrying out conversion on the positive pressure drop and the K coefficient to obtain a cooling curve; processing the cooling curve with a fitting and smoothing method so as to obtain a more precise and complete cooling curve; and simultaneously using the infrared thermal imaging system to shoot a temperature distribution diagram. A precise temperature distribution graph can be obtained by using precise cooling curve temperatures to calibrate the temperature distribution diagram. According to the invention, an electric testing method is used to calibrate an infrared thermogram, and high precision of semiconductor device temperature distribution testing is realized.

Description

technical field [0001] The invention belongs to the technical field of transient thermal testing of semiconductor devices, in particular to a device and method for accurately testing the temperature distribution of semiconductor devices. Background technique [0002] Power semiconductor devices are high-heating electronic products, and the product life and normal operation are closely related to whether the product's operating junction temperature Tj exceeds the allowable maximum junction temperature Tjm. Tjm is an important rated value of the device, and it is a comprehensive technical and quality level indicator. Many other important technical indicators of the device are reflected and guaranteed by Tjm. Taking a high-power LED as an example, the increase of its working current will generate a lot of heat, which will cause a significant change in the pn junction temperature of the LED chip, which will have an important impact on the performance of the LED, resulting in cha...

AI Technical Summary

Problems solved by technology

However, since the infrared thermal imager is a non-contact tester, the measurement is greatly affected by the intermediate medium and the test environment. Therefore, the temperature distribution accuracy of the infrared thermal image is low, and it cannot accurately reflect the temperature distribution of the shooting area.

For example, the measurement accuracy of the German InfraTec (InfraTec) high-precision infrared thermal imaging camera VarioCAM?hr research (VCr for short) is only ±1°C

Images