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Electrical method for measuring temperature distribution of power electronic device

A power electronic device, temperature distribution technology, applied in the direction of measuring electricity, measuring electrical variables, measuring devices, etc., can solve the problem that the chip temperature distribution cannot be measured, and achieve the effect of accurate chip temperature distribution

Pending Publication Date: 2021-10-19
华电(烟台)功率半导体技术研究院有限公司
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method proposed by the invention can measure the chip temperature distribution simply, conveniently and quickly, especially solves the problem that the chip temperature distribution cannot be measured in the current pressure-bonded IGBT device, and lays the foundation for its reliability research

Method used

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  • Electrical method for measuring temperature distribution of power electronic device
  • Electrical method for measuring temperature distribution of power electronic device
  • Electrical method for measuring temperature distribution of power electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1, for the chip of the IGBT device of 650V100A, carry out electrical temperature measurement, the implementation flow diagram is as follows figure 1 shown.

[0039] 1. Obtain the output characteristic curves of the device under test at different temperatures through experimental measurement, that is, when the gate voltage is fixed at 15V, the collector-emitter (CE) current I Voltage across CE V characteristic curve;

[0040] 1.1 Put the device under test into an incubator, and stabilize the incubator at a temperature of 110°C;

[0041] 1.2 Applying different measurement currents to the device I , measuring the junction voltage drop of the device V , the measurement method is as figure 2 As shown, the range of different measurement currents is from 0 to 100mA, and the value is uniform in this range, with a gap of 2mA, and the temperature is 110°C. I - V characteristic curve;

[0042] 1.3 Adjust the temperature of the incubator to stabilize at a new te...

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Abstract

The invention relates to the technical field of power electronic device junction temperature measurement, and particularly relates to an electrical method for measuring temperature distribution of a power electronic device. The method comprises the following steps of: 1) obtaining I-V-T characteristic curves of the device at different temperatures through experimental measurement; 2) fitting I-V-T characteristic curve experimental data to obtain a numerical relationship I (V, T) of I, V and T; 3) describing temperature distribution of the device chip by using function distribution; 4) simulating an on-state circuit model of a device under a small current by using n diode parallel circuit models, and establishing numerical models of I and V of a device chip under the temperature gradient; 5) obtaining on-state voltage drops of the device under different currents through a multi-current measurement method; 6) solving through a simultaneous nonlinear equation set to obtain parameters of a temperature distribution function; and 7) substituting the parameters into the temperature distribution function to obtain chip temperature distribution. Compared with the prior art, the method does not need to damage a device packaging structure.

Description

technical field [0001] The invention relates to the technical field of junction temperature measurement of power electronic devices, in particular to an electrical method for measuring the temperature distribution of power electronic devices. Background technique [0002] Power electronic devices are being widely used in DC power grids, electric locomotives and electric vehicles, etc., according to the research report on the reliability of power electronic systems, power electronic devices are the part with the highest failure rate in the power electronic system, accounting for about 100% of the entire power electronic system. 34% of the total. 55% of the failure of power electronic devices is caused by temperature. It can be seen that accurate measurement of the junction temperature of power electronic devices is of great significance for improving the reliability of the entire power electronic system. [0003] The PN junction voltage drop method under small current is cu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2619G01R31/2632G01R31/2628
Inventor 邓二平陈杰刘鹏赵雨山黄永章
Owner 华电(烟台)功率半导体技术研究院有限公司
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