Analysis Method of Thermal Conductivity of Semiconductor Thin Film Based on Raman Spectroscopy Technology

Abstract

The invention discloses a method for analyzing the thermal conductivity of semiconductor thin films based on Raman spectrum testing technology, comprising: the design and preparation of the microbridge structure of the thin film sample to be tested; the calibration of the Raman peak of the thin film material with the temperature shift coefficient; Calculation of temperature distribution in the area to be tested of the microbridge; use of simulation fitting analysis to extract the thermal conductivity of the film. The invention solves the problem of accurate characterization of the thermal conductivity of semiconductor thin film materials with a specific thickness, improves the test accuracy and reduces the test cost, and meets the research needs of semiconductor devices on the thermal properties of thin film materials with a thickness between 100 nanometers and 10 microns. The technical development of device thermal management has great guiding significance.

Description

technical field [0001] The invention relates to semiconductor thin film testing technology, in particular to a semiconductor thin film thermal conductivity analysis method based on Raman spectrum testing technology. Background technique [0002] The development trend of semiconductors represented by gallium nitride and gallium arsenide towards high power density is limited by the problem of rising device junction temperature caused by self-heat accumulation effect, which seriously leads to the decline of device performance and reliability. Therefore, the thermal management of devices has become an important research direction in the development and application of high-power devices, and the research on the thermal properties of the device's own materials runs through the entire process of device thermal design, which is an important way to evaluate and guide the development of thermal management. At present, the thermal management technology of semiconductor devices has deve...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for analyzing the thermal conductivity of semiconductor thin films based on Raman spectroscopy testing technology, which overcomes the problems of insufficient precision and poor economy in the characterization and analysis of thermal conductivity of semiconductor micro-nano thin films in the existing testing technology. The micro-bridge thermal structure of the electrode is designed to meet the combination of Raman test and simulation fitting analysis, and realize the accurate characterization of the thermal conductivity of micro-nano-scale thin films.

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