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Method and system for detecting data retention of flash memory

A flash memory chip, data retention technology, applied in static memory, instruments, etc., can solve problems such as affecting inspection efficiency and cumbersome polling comparison process.

Active Publication Date: 2015-10-28
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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  • Claims
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Problems solved by technology

[0009] In the above method, since the address comparison of each bad sector found by CP2 with all the bad sectors found by CP1 is performed sequentially, when the number of bad sectors exceeds 4, the polling comparison process becomes Quite cumbersome, affecting the efficiency of DR inspection

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  • Method and system for detecting data retention of flash memory
  • Method and system for detecting data retention of flash memory
  • Method and system for detecting data retention of flash memory

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Embodiment Construction

[0038] In order to make the purpose and features of the present invention more obvious and understandable, the specific implementation of the present invention will be further described below in conjunction with the accompanying drawings. However, the present invention can be implemented in different forms and should not be limited to the described embodiments.

[0039] The flash memory chip data retention checking method and system of the present invention mark the bad sectors checked out for the first time, and compare the total number of bad sectors checked out for the second time and the total number of marks therein with the first Compared with the total number of bad sectors checked for the second time, it can quickly determine whether the flash memory chip has passed the data retention check. The technical scheme of the present invention can realize self-test through memory built-in self-test technology (Memory Built-in Self Test, MBIST), thereby reducing the demand for ...

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Abstract

The invention provides a method and a system for detecting data retention of a flash memory. The method comprises the following steps: marking bad sectors detected for the first time can be marked; comparing the total quantity of bad sectors detected for the second time with the total quantity of the marked bad sectors and the total quantity of the bad sectors detected for the first time, so that whether the flash memory passes the data retention detection or not can be quickly judged, and the trouble that in the prior art, the addresses of the bad sectors detected twice need to be compared one by one can be avoided. Therefore, the method provided by the invention is relatively simple, quick and effective, and can be applied to multi-sector repairing and read-write management for the flash memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method and system for checking the data retention of a flash memory chip. Background technique [0002] At present, with the continuous development of electronic technology, embedded systems are more and more widely used in control, consumer, communication and other electronic products, and embedded technology is more and more closely integrated with people's lives. Flash memory device (Flash Memory) is a non-volatile solid-state memory, it is a completely non-volatile memory, can provide reliable data power-off protection; and it can be written online, fast access speed, is a high-speed Reliable, high-density solid-state storage devices. At present, all kinds of Flash have gradually become the most important storage devices in embedded systems. At the same time, flash memory devices have their inherent limitations. First, a programmed flash cell must be e...

Claims

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Application Information

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IPC IPC(8): G11C29/56
Inventor 任栋梁钱亮方声阳
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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