Photoetching method and processing chamber

Abstract

The invention provides a photoetching method and a processing chamber. The photoetching method comprises the following steps: putting a wafer into a coating chamber, setting the air pressure in the coating chamber to be first air pressure, carrying out first spinning on the wafer surface, and covering the wafer surface with a photoetching material layer; after carrying out first spinning, carrying out first depressurization step, and lowering the air pressure in the coating chamber into the second air pressure from the first air pressure; carrying out second spinning on the wafer surface; carrying out solidification treatment on the photoetching material layer; and photoetching the wafer covered with the photoetching material layer. The first depressurization step is carried out after first spinning is carried out on the wafer surface, so that bubbles in the photoetching material layer are extruded or broken off along with air pressure drop; the bubbles do not easily exist in the photoetching material layer which is subjected to second spinning and solidification treatment. Therefore, the photoetching accuracy can be effectively improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a photolithography method and a process chamber. Background technique [0002] As the density of transistors on integrated circuits continues to increase, the critical dimensions (CD) of semiconductor manufacturing continue to shrink, and the requirements for lithographic precision are also increasing. [0003] In order to improve the precision of the photolithography process, before coating the photoresist, it is necessary to coat a flat layer on the surface of the wafer, so as to reduce the problem of the decrease of the precision of the photolithography caused by the unevenness of the wafer surface. The material of the flat layer is usually a highly viscous organic solution. In the prior art, the organic solution is coated with the same spin coating equipment as the photoresist coating, and the organic solution coated on the wafer is subsequently baked. A solid flat layer is for...

AI Technical Summary

Problems solved by technology

[0004] Bubbles are easily generated in the flat layer formed by the prior art, and the bubbles in the flat layer will affect the lithography precision, and then affect the performance of the semiconductor device formed on the wafer

[0005] In addition, in the process of forming the photoresist, there is also the problem of bubbles formed in the photoresist, which will also affect the photolithography accuracy.

Images