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ge/si avalanche photodiode with integrated heater and method of making the same

An avalanche photoelectric and diode technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of low efficiency and response speed

Active Publication Date: 2017-10-13
SIFOTONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, this approach is too inefficient and responsive for practical use

Method used

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  • ge/si avalanche photodiode with integrated heater and method of making the same
  • ge/si avalanche photodiode with integrated heater and method of making the same
  • ge/si avalanche photodiode with integrated heater and method of making the same

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Embodiment Construction

[0016] Detailed description of the preferred embodiment

[0017] example implementation

[0018] In order to solve the foregoing problems, the present invention provides an avalanche photodiode with an integrated heater and a manufacturing method thereof.

[0019] figure 2 A cross-sectional view of a device 200 comprising a Ge / Si avalanche photodiode 204 with at least one heater integrated therein is shown, according to an embodiment of the invention. Such as figure 2 As shown, the Ge / Si avalanche photodiode 204 includes at least one integrated heater formed on the top surface of a substrate 210, which may be a silicon-on-insulator (SOI) substrate. The substrate 210 may include a silicon substrate layer, a buried (BOX) layer, and a top Si layer, the BOX layer being disposed between the silicon substrate layer and the top Si layer.

[0020] In terms of manufacturing process, first, a Ge / Si avalanche photodiode 204 with a mesa structure is formed on the top Si layer, and the...

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Abstract

Various embodiments of a novel structure of a Ge / Si avalanche photodiode with an integrated heater and methods of making the same are provided. In one aspect, a doped region is formed on the top silicon layer or silicon substrate layer to function as a resistor. When the ambient temperature drops below a certain point, the temperature control loop is automatically triggered and an appropriate bias is applied along the heater, so the temperature of the junction region of the Ge / Si avalanche photodiode is kept within an optimized range to maintain The high sensitivity level of the avalanche photodiode as well as the low bit error rate level.

Description

[0001] Cross references to related patent applications [0002] This application claims priority to U.S. Provisional Patent Application No. 61 / 966,353, filed February 21, 2014, and U.S. Nonprovisional Patent Application No. 14 / 605,524, filed January 26, 2015, which are incorporated by reference method is incorporated here. technical field [0003] The present invention relates to photonic devices. More specifically, the present invention relates to an integrated structure of an avalanche photodiode and a heater thereof. Background of the invention [0004] Avalanche photodiodes (APDs) are widely used in optical fiber communication due to their higher sensitivity benefiting from the carrier multiplication principle. Compared to PIN photodiodes (PDs), traditional III-V APD receivers offer greater than 6dB sensitivity improvement at data rates up to 10Gb / s. However, InP-based APDs exhibit limited gain-bandwidth products and high multiplication noise due to the large k-factor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/02H01L31/0203H01L27/14H01L31/024H01L31/107H01L31/18
CPCH01L31/02027H01L27/14H01L31/024H01L31/1075H01L31/1804H01L31/0203H01L31/028H01L31/02327Y02E10/547Y02P70/50
Inventor 石拓蔡鹏飞王良波张耐陈旺栗粟洪菁吟黄梦园潘栋
Owner SIFOTONICS TECH