tsv measuring device and measuring method

Abstract

The invention discloses a TSV measuring device and a measuring method capable of measuring through holes such as TSVs. A TSV measuring device for measuring a TSV formed on a measurement object, comprising: a light source; a digital iris section provided on a path of light irradiated from the light source, and adjusting the TSV from the light source according to an aspect ratio of the TSV. The irradiation area of ​​the irradiated light; the beam splitter, which splits and outputs the light passing through the digital variable aperture unit in the first direction and the second direction perpendicular to each other, and combines the first reflected light and the second reflected light to output the combined light , wherein the first reflected light is light reflected from the measurement object arranged in the first direction, and the second reflected light is light reflected from the mirror arranged in the second direction; The emitted combined light is used to measure TSV. The digital iris unit does not physically move and performs the function of performing the diaphragm selectively having different aperture sizes according to the aspect ratio of the TSV.

Description

technical field [0001] The present invention relates to a TSV measuring device and a measuring method, and more specifically relates to a TSV measuring device and a measuring method capable of measuring through holes such as TSVs by using an interferometer to which a digital variable aperture is applied. Background technique [0002] In order to realize a high-density semiconductor circuit, a fine line width is realized by exposure, but the line width that can be realized is limited by the diffraction limit. [0003] In order to overcome this problem, a method of reducing the diffraction limit by using light with a shorter wavelength than visible light such as extreme ultraviolet (EUV), and a 3D semiconductor package that increases density by vertically stacking multiple wafer chips that have completed the process (3D semi-conductor packaging) process, etc. [0004] In the 3D semiconductor packaging process in which multiple wafer chips are stacked vertically, in order to f...

AI Technical Summary

Problems solved by technology

[0008] However, in the case of using the conventional method using an interferometer, when the lens that emits light toward the TSV passes through the wide-angle mirror, the incident angle of the light incident on the TSV is larger than the diameter of the TSV, so the amount of light incident on the inside of the TSV is actually small. Furthermore, the bottom surface of the TSV cannot be reached, so there is a problem that it is practically impossible to measure the TSV or it is difficult to measure the TSV

[0009] Also, even if the light source is replaced to increase the intensity of the light reaching the bottom of the TSV, the focal point of the light emitted to the TSV is measured every predetermined distance in the direction of forming the TSV, so the measurement time is long and the resulting data capacity is also very large, so it becomes Causes of Overall System Overload

[0010] Accordingly, some countermeasures for TSV measurement devices that can improve the measurement accuracy of TSV have been proposed recently, but they are still insufficient, so the development of TSV measurement devices is definitely needed

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