Pattern wafer for LED, epitaxial wafer for LED, and manufacturing method of epitaxial wafer for LED
A technology for epitaxial wafers and wafers, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve problems such as cracks in the semiconductor layer, unstable growth of the semiconductor layer, and uneven flattening of the semiconductor layer.
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Embodiment 1
[0409] (Example 1, Comparative Example 1)
[0410] In Example 1 and Comparative Example 1, the influence of the shape of the top of the convex portion was investigated. The shape of the top of the convex portion was observed with a scanning electron microscope. The concavo-convex structure A is a regular hexagonal arrangement. That is, 6 times of symmetrical arrangement. Also, as the average interval Pave, two types of 300 nm and 900 nm were produced. Let the rotational displacement angle θ be 30°. Accordingly, the case where the top of the convex portion has a rounded corner shape (Example) and the case where a mesa is present at the top of the convex portion (Comparative Example 1) were compared. The produced samples are described in Table 1. In addition, the shape of the cross-section of the top of the protrusion relative to Example 1 is conical.
[0411] [Table 1]
[0412]
[0413] As can be seen from Table 1, when the shape of the top of the protrusion is a rounde...
Embodiment 2
[0414] (embodiment 2, comparative example 2)
[0415] In Example 2 and Comparative Example 2, the influence of the rotational displacement angle θ was investigated. The arrangement of the concavo-convex structure A is a regular hexagonal arrangement, that is, a six-fold symmetrical arrangement. Also, the average interval Pave was all 300 nm, and the shape of all the tops of the convex portions had rounded corners, which was the same as that of Example 1. The rotational displacement angle θ is used as a parameter to vary from 0° to 30° in 10° increments. The evaluated samples are summarized in Table 2. In the samples described in Table 2, the internal quantum efficiency IQE was about 90%, which was almost the same for any of the samples.
[0416] [Table 2]
[0417]
[0418] The cracks in the evaluation items in Table 2 were standardized by setting the case where the rotational displacement angle θ was 0° (comparative example 2) to 1. More specifically, as the rotation d...
Embodiment 3
[0421] In Example 3, a more preferable range of the average interval Pave was investigated. Let the concave-convex structure A of the LED pattern wafer (1) be a regular hexagonal arrangement (six symmetrical arrangements), the shape of the top of the convex part is a corner with a circular arc, the cross-sectional shape of the top of the convex part is dome-shaped, and the rotation displacement The angle θ is 30°. The parameter is the average interval Pave, which can be adjusted in the range from 200nm to 1800nm. The prepared samples are summarized in Table 3.
[0422] [table 3]
[0423]
[0424] According to Table 3, it can be seen that the smaller the average interval Pave is, the more the internal quantum efficiency IQE is improved. The reason for this is presumed to be that the smaller the average interval Pave is, the higher the density of the uneven structure A is, and thus the dislocations in the semiconductor layer can be dispersed. More specifically, it is cons...
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