A storage circuit based on resistive memory unit rram
A storage circuit and resistive storage technology, which is applied in information storage, static memory, digital memory information, etc., can solve problems such as unusability, and achieve the effects of improving repair opportunities, providing testability, and providing feasibility
Active Publication Date: 2018-05-08
XI AN UNIIC SEMICON CO LTD
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Problems solved by technology
For chips developed based on certain processes that do not support eFUSE technology, this technology cannot be used to achieve the above functions
[0008] 2. eFUSE technology supports eFUSE programming after the chip leaves the factory to change the internal circuit, but this operation is a one-time programming, so there is only one chance to repair the relevant circuit, which has certain limitations
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Embodiment Construction
[0040] On-chip multi-data storage scheme of the present invention such as figure 2 As shown, it mainly includes storage array, instruction decoder, row control module, column control module and test module.
[0041]The instruction decoder is a combinational logic circuit, which is used to receive the operation instruction and complete the decoding of the operation instruction, so as to realize the corresponding operation on the internal storage array. The operating instructions in the present invention mainly include four operations: set (write 0), reset (write 1), read (read stored data), and readr (read RRAM unit organization). The purpose of the set and reset instructions is to perform low-resistance operation and high-resistance operation on the selected RRAM cell respectively to realize the writing of data 0 or 1. Due to the repeatability of the RRAM unit, the operator can implement multiple write operations on the data storage unit in the array through the set / reset co...
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The invention relates to a storage circuit based on a resistive storage unit RRAM, which includes a row control module, a column control module, a storage array, an instruction decoder and a test module. The storage array includes a plurality of data storage units and flag storage units, and the data The storage unit includes an RRAM unit, a sensitive amplifier, a reference resistor circuit and a data path; the flag bit storage unit is used to reflect whether the storage unit has been written; the sensitive amplifier is finally in a high voltage state or a low voltage state according to the resistance at both ends The data path is used to connect the circuit to be repaired and the test module through the output port fuseq; the output terminal of the row control module is connected to each row storage, and the output terminal of the column control module is connected to each column data storage unit. It solves the technical problem that the existing eFUSE technology has limited technical support and can only be repaired once. The invention can replace the eFUSE technology and can realize the storage technology of multiple programming operations.
Description
technical field [0001] The invention relates to a storage circuit based on a resistive storage unit RRAM which can replace eFUSE technology. Background technique [0002] With the rapid development of the information age, the development of integrated circuits is also increasing rapidly, and the design level is improving day by day. The function and logic complexity of VLSI and system-on-chip chips are also increasing. On the other hand, in order to pursue low power consumption and high integration, the manufacturing process of chips is becoming more and more complicated, which makes chips more prone to defects in the manufacturing process, especially in memory chips, which inevitably exist after leaving the factory. More or less damaged memory cells, or defective logic functions, reduce the yield rate and increase the cost of chip design and development. Therefore, in chip development, redundant units are generally added to achieve subsequent replacement of defective parts...
Claims
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IPC IPC(8): G11C13/00
Inventor 王小光
Owner XI AN UNIIC SEMICON CO LTD