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SUBSTRATE PROCESSING APPARATUS and method for manufacturing semiconductor device

A substrate processing device and gas processing technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc., can solve problems such as complex structure, increased man-hour cost, and maintenance cost, and achieve the goal of improving capture efficiency Effect

Active Publication Date: 2016-01-27
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the structure becomes complicated, there is a problem that maintenance takes man-hours and costs increase

Method used

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  • SUBSTRATE PROCESSING APPARATUS and method for manufacturing semiconductor device
  • SUBSTRATE PROCESSING APPARATUS and method for manufacturing semiconductor device
  • SUBSTRATE PROCESSING APPARATUS and method for manufacturing semiconductor device

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Experimental program
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Effect test

no. 1 approach

[0041]

[0042] The structure of the substrate processing apparatus 100 according to this embodiment is shown in figure 1 . Such as figure 1 As shown, the substrate processing apparatus 100 is configured as a monolithic substrate processing apparatus.

[0043] (processing container)

[0044] Such as figure 1 As shown, the substrate processing apparatus 100 includes a processing container 202 . The processing container 202 is configured, for example, as a flat airtight container having a circular cross section. In addition, the processing container 202 is made of metal materials such as aluminum (Al) and stainless steel (SUS), for example. Formed in the processing chamber 202 are: a processing space 201 for processing a wafer 200 such as a silicon wafer as a substrate; and a transport space 203 for passing the wafer 200 when transporting the wafer to the processing space 201 . The processing container 202 is composed of an upper container 2021 and a lower container 2022...

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PUM

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Abstract

The invention aims to provide a substrate processing apparatus which improves the capature efficiency of a component different from a process gas in a shower head and a method for manufacturing a semiconductor device. A substrate processing apparatus includes a shower head configured to disperse a gas; a process vessel installed at a downstream side of the shower head and configured to have a process space that allows a substrate to be processed by a process gas therein; a gas supplier connected to the shower head; a shower head gas exhauster connected to the shower head; and a capturing assembly configured to capture a component different from the process gas within the shower head.

Description

technical field [0001] The invention relates to a substrate processing device and a method for manufacturing a semiconductor device. Background technique [0002] In recent years, semiconductor devices such as flash memory tend to be highly integrated. Along with this, the pattern size is significantly reduced. In forming these patterns, a step of subjecting the substrate to predetermined treatments such as oxidation treatment and / or nitriding treatment may be performed as one of the manufacturing steps. [0003] As one of the above patterning methods, there is a step of forming grooves between circuits and forming a seed film, a liner film, and / or wiring in the grooves. With recent miniaturization, the grooves have a high aspect ratio. [0004] When forming a liner film, etc., it is required to form a good step-coverage film without uneven film thickness and film quality on the upper side, middle side, lower side, and bottom of the groove. This is because the characteri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
CPCC23C16/45565C23C16/4412C23C16/45544C23C16/45587C23C16/52
Inventor 泽田元司
Owner KOKUSA ELECTRIC CO LTD