Solid-state imaging device and method for manufacturing solid-state imaging device

Abstract

The invention relates to a solid-state imaging device and a method for manufacturing a solid-state imaging device. The solid-state imaging device includes a semiconductor layer, a charge transfer region, a floating diffusion (FD), and a reading gate. The semiconductor layer is provided with a photoelectric conversion element. The charge transfer region is formed on a surface of the semiconductor layer over a charge accumulation region in the photoelectric conversion element. The FD is provided on the charge transfer region to hold a charge transferred from the charge accumulation region. The reading gate is provided on a side surface of the FD and a side surface of the charge transfer region via an insulating film.

Description

[0001] This application is entitled to the benefit of the priority of Japanese Patent Application No. 2014-142618 for which it applied on July 10, 2014, and the whole content of this Japanese Patent Application is used for this application. technical field [0002] This embodiment generally relates to a solid-state imaging device and a method of manufacturing the solid-state imaging device. Background technique [0003] Conventionally, there is a solid-state imaging device in which a photoelectric conversion element and a floating diffusion region are provided at intervals in the plane direction of a semiconductor layer, and a gate insulating layer is interposed between the photoelectric conversion element and the floating diffusion region on the surface of the semiconductor layer. The membrane is provided with a readout gate. [0004] In this solid-state imaging device, when a predetermined voltage is applied to the readout gate, a channel is formed in the surface layer of ...

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Problems solved by technology

[0005] However, in recent solid-state imaging devices, as pixels have been miniaturized, the distance between the photoelectric conversion element and the floating diffusion region has narrowed, and the gate length of the readout gate has shortened accordingly. The potential barrier between

[0006] In a solid-state imaging device, if the potential barrier between the photoelectric conversion element and the channel becomes high, signal charges that should be transferred to the floating diffusion region may remain in the photoelectric conversion element without being transferred, resulting in afterimages in captured images.

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