Supercharge Your Innovation With Domain-Expert AI Agents!

Back failure positioning method of chip

A failure location, chip technology, applied in the field of semiconductor technology, can solve the problem of not reducing photon loss, and achieve the effect of improving product quality and reliability, improving quality and success rate

Inactive Publication Date: 2016-02-17
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this patent cannot reduce the problem that photons have a certain loss when passing through the light-transmitting sheet

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back failure positioning method of chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. Obviously, the described examples are only some examples of the present invention, not all examples. Based on the examples summarized in the present invention, all examples obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0023] It should be noted that, in the case of no conflict, the examples in the present invention and the features in the examples can be freely combined with each other.

[0024] An example of the present invention will be explained in detail below in conjunction with the accompanying drawings.

[0025] Such as figure 1 A method for locating a failure on the back of a chip according to an embodiment of the present invention includes the following steps:

[0026] Step 1, providing a light-transmitting thin sheet 1, preferably a glass sli...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention, which relates to the semiconductor process field, provides a back failure positioning method of a chip. The method comprises: a thin plate is provided and a through hole is formed in the thin plate; a chip is fixed on the thin plate and an analysis area is arranged on the chip, wherein the analysis area is arranged above the through hole of the thin plate and the area of the analysis area is smaller than the size of an opening of one side, opposite to the chip side, of the through hole; and the analysis area above the through hole of the slice plate is localized by using a light emission analysis device. According to the technical scheme, because of avoidance of the filter effect of the light-transmitting thin plate of the back of the sample, a clear optical chip back image and a photonic signal can be obtained for a failure area.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a failure location method on the back of a chip. Background technique [0002] Chip failure analysis is an important task to confirm various failure causes and improve product quality and reliability. As for the failure of memory products in the storage area, we obtain the failure address through electrical tests. For other failures such as logic areas, in most cases, equipment such as light emission microscopes is used to find out the failure location from tens of millions to billions of transistors, and perform subsequent analysis. [0003] However, with the continuous advancement of process research and development, silicon devices are covered with more and more layers of metal layers, which prevent the emitted photons from being collected by the probe. Therefore, in most cases, photon signals are collected from the back of the chip for failure location. [0004] For...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/28
Inventor 陈强
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com