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Manufacturing method of flash memory

A manufacturing method and flash memory technology, which are applied in the fields of semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the material of the storage unit is difficult to remove, and achieve the effect of easy removal.

Inactive Publication Date: 2016-02-24
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0006] In order to solve the problem that the substance deposited on the storage unit for protecting the storage unit is difficult to remove, this application provides a method for making flash memory, which can more easily remove the substance deposited for protecting the storage unit

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  • Manufacturing method of flash memory
  • Manufacturing method of flash memory
  • Manufacturing method of flash memory

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Embodiment Construction

[0038] It should be noted that, in the case of no conflict, the features in the implementation manners and specific implementation manners in the present application may be combined with each other. The present application will be described in detail below with reference to the drawings and in combination with specific embodiments.

[0039]It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, it indicates There are features, steps, operations, means, components and / or combinations thereof.

[0040] For the convenience of description, spatially relative terms may be used here, such as "on...

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Abstract

The invention discloses a manufacturing method of a flash memory. The flash memory comprises a first grid cell and a second grid cell, wherein the first grid cell comprises a first grid, a first separator, a first source region and a first drain region; and the second grid cell comprises a second grid, a second separator, a second source region and a second drain region. The manufacturing method comprises a manufacturing process of the first grid cell and a manufacturing process of the second grid cell; during the manufacturing process of the first grid cell, an organic material is utilized for protecting the second grid or the second grid cell which has been manufactured; or during the manufacturing process of the second grid cell, the organic material is utilized for protecting the first grid or the first grid cell which has been manufactured. Through the manufacturing method, the problem that substrates deposited on a memory cell for protecting the cell are difficult to remove is solved, and then the effect of quickly and thoroughly removing the substrates deposited for protecting the memory cell is achieved.

Description

technical field [0001] The present application relates to the field of semiconductors, and in particular, to a method for manufacturing a flash memory. Background technique [0002] With the development of ultra-large-scale integrated devices, the size of the device is continuously reduced, and the thickness of the film is also continuously reduced, and various challenges are faced in various aspects of device manufacturing. [0003] For flash memory, since the memory cell area and its peripheral circuit area of ​​flash memory need to be operated during the use of the device, and different areas require different operating conditions, the design rules of the memory cell area and its peripheral circuit area are also obviously different. For example, memory cell regions require smaller gate spacing. Because the peripheral circuit area requires a higher breakdown voltage, generally, charging devices require a higher breakdown voltage, especially high-voltage devices, which req...

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Application Information

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IPC IPC(8): H01L21/8247
Inventor 杨芸李绍彬仇圣棻
Owner SEMICON MFG INT (SHANGHAI) CORP
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