Equivalent circuit-based transistor reliability representation method

Abstract

The invention provides an equivalent circuit-based transistor reliability representation method, which comprises the following steps: (S1) determining an equivalent circuit of a transistor according to the transistor type; (S2) determining the type and the size of stress applied to an accelerated lifetime test and determining a sensitive parameter degradation model in the equivalent circuit; (S3) carrying out the accelerated lifetime test on the transistor; (S4) regularly collecting testing data of the transistor, extracting a sensitive parameter of the equivalent circuit to obtain a variation relationship of the sensitive parameter of the equivalent circuit along with the stress and time; (S5) fitting undetermined constants in the sensitive parameter degradation model to obtain a complete sensitive parameter degradation model and a complete equivalent circuit; and (S6) carrying out failure mechanism analysis and reliability analysis on the transistor. The equivalent circuit-based transistor reliability representation method can be used for simulating influences of a device failure mechanism on circuit performance, analyzing the failure mechanism of the transistor and guiding process improvement; the performance degradation and the failure time of the transistor can also be predicted; and the reliability test time is shortened.

Description

technical field [0001] The invention belongs to the technical field of reliability evaluation, and in particular relates to a transistor reliability characterization method based on an equivalent circuit. Background technique [0002] The reliability of transistor devices is the key to the application of transistors, and it is a problem that must be solved before the product is used. At present, the commonly used method to characterize the reliability of transistors is mainly through the accelerated reliability life test, and according to the change trend of the test data over time, the mean time to failure (MTTF) of the device under normal working conditions is obtained by extrapolation. The failure mechanisms of transistor devices mainly include gate degradation, ohmic contact degradation, hot electron effect, channel degradation, etc. When the transistor is working, the cause of device degradation and failure is not just the effect of one failure mechanism, but often a c...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a transistor reliability characterization method based on an equivalent circuit in view of the deficiencies of the prior art, which can well solve the problems that the existing characterization methods are difficult to analyze the failure mechanism and have low efficiency

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