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A kind of test method of dark current of long-wave hgcdte photovoltaic device

A test method and technology for photovoltaic devices, applied in the field of communication, can solve the problem that dark current cannot be measured quickly and accurately at low cost, and achieve the effects of convenient batch analysis, short time and low cost

Active Publication Date: 2018-04-27
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problem in the related art that the dark current of long-wave devices cannot be measured quickly and accurately at low cost, the present invention provides a method for testing the dark current of long-wave HgCdTe photovoltaic devices to solve the above technical problems

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  • A kind of test method of dark current of long-wave hgcdte photovoltaic device
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  • A kind of test method of dark current of long-wave hgcdte photovoltaic device

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Embodiment 1

[0027] figure 1 It is a flow chart of a test method for dark current of a long-wave HgCdTe photovoltaic device according to Embodiment 1 of the present invention, such as figure 1 As shown, the method includes:

[0028] Step A, install the sample in a liquid nitrogen Dewar, and solder the leads as defined. Specifically, step A includes: sticking the sample on the cold head of Zhongce Dewar.

[0029] Step B, install a cold screen and add a temperature sensor in the above Dewar.

[0030] Step C, performing a vacuum extraction operation on the above-mentioned cold screen. Specifically, step C includes: performing a vacuum extraction operation on the liquid nitrogen Dewar until the vacuum degree reaches 1 torr.

[0031] Step D, connect the above-mentioned Dewar to the semiconductor test analyzer with a test line.

[0032] One end of the above-mentioned test line is a BNC RF connector, the other end is a miniature D-type plug, and the middle is set as an RF cable. The above-me...

Embodiment 2

[0048] figure 2 It is a schematic diagram of the dark current test structure according to Embodiment 2 of the present invention, such as figure 2 As shown, the embodiment of the present invention first uses the test die of the chip as the sample material, so that the measurement can be carried out on the pn junction itself, which is a non-destructive measurement in itself, and avoids the interference of external factors such as the introduction of circuits.

[0049] In addition, in order to reduce the radiation noise of the background, the previous single-layer sealed cold shield was changed to a structure composed of a c-ring (rc ceramic ring), an inner cold shield, and an outer cold shield. The inner cold screen is supported on the top, and the vacuum in the middle of the double-layer cold screen can better reduce the heat exchange between the background of the detector and the outside world, making the background temperature lower. In addition, the inner cold screen is go...

Embodiment 3

[0055] The test method for the dark current of the long-wave HgCdTe photovoltaic device in this embodiment is as follows: firstly, the sample is pasted on the cold head of the Zhongce Dewar, and welded according to the definition, and then a c-shaped ring is placed around the sample, and on the c-shaped ring Paste the inner gold-plated cold screen, and evenly fill the thermal grease on the c-shaped ceramic ring, then add a temperature sensor on the outer surface of the inner cold screen, then install the outer cold screen, and finally buckle the window seat on the outside, and then start pumping Vacuum, stop when the vacuum reaches 1torr, then pour liquid nitrogen into the test Dewar, and monitor the temperature of the inner cold screen in real time, when the sensor value is stable at around 1.05 (80k), connect the Dewar to the semiconductor analyzer , carry out the IV test of the sample, the test result is as follows Figure 4 As shown, the data signal is finally processed fo...

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Abstract

The invention discloses a method for testing the dark current of a long-wave HgCdTe photovoltaic device. Wherein, the method includes: Step A, install the sample in the liquid nitrogen Dewar, and weld the lead wire according to the definition; Step B, install the cold screen in the Dewar and add a temperature sensor; Step C, carry out the liquid nitrogen Dewar Vacuum pumping operation; step D, connect Dewar and semiconductor test analyzer with test line; step E, conduct voltage test on the sample based on semiconductor test analyzer and save data; step F, analyze data based on semiconductor test analyzer. The present invention solves the problem that the dark current of long-wave devices in the prior art cannot be measured quickly and accurately at low cost, and can satisfy the non-destructive detection of dark current in batches of long-wave devices in a short period of time, so as to facilitate batch analysis of device parameters, data Statistics, used to guide process improvement.

Description

technical field [0001] The invention relates to the communication field, in particular to a method for testing the dark current of a long-wave HgCdTe photovoltaic device. Background technique [0002] HgCdTe infrared detectors play a very important role in meteorology, medical treatment, etc., especially in military fields such as anti-missile early warning and target tracking in recent years. Its dark current level and related noise determine the performance of the detector. The key elements directly affect the target recognition distance and false alarm rate of the infrared system, and the influence of dark current must be studied and minimized. Long-wave devices have higher dark current than medium and short-wave devices. In order to reduce the dark current, it is necessary to accurately monitor the dark current in order to better research and improve it. Generally, the experimental equipment for the detection method of dark current is expensive and complicated, the prep...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R19/00
Inventor 孙浩鲍哲博朱西安李家发刘伟东海杰宁提
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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