The method of increasing the q value of the inductor and the inductor

Abstract

The invention provides a method of increasing the Q value of an inductor and an inductor. First, a high-resistivity silicon substrate is provided, and the high-resistivity silicon exposes the substrate surface in a silicon wafer region where an inductor is to be formed. Then, a high density plasma chemical vapor deposition process is executed for the substrate to form an interlayer insulating layer on the substrate surface. In the high density plasma chemical vapor deposition process, a trap is formed on the surface of the silicon wafer region where the inductor is to be formed and which is on the exposed substrate surface by using the characteristic that an HDP requires the use of ion bombardment for heating the substrate, and then the interlayer insulating layer is grown on the substrate surface formed with the trap by growing a high density plasma layer. Finally, a metal layer is deposited on the interlayer insulating layer, and a pattern is formed for the metal layer so as to manufacture the inductor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, the invention relates to a method for increasing the Q value of an inductor and the inductor made therefrom. Background technique [0002] Inductance is a component that can convert electrical energy into magnetic energy and store it. It is a commonly used electronic component in electronic circuits including integrated circuits. [0003] For inductors of passive devices, the most important performance is the quality factor Q of the inductor. When the inductor is fabricated on a high-resistance substrate, the Q value of the inductor is mainly determined by the substrate resistance. The higher the substrate resistance, the higher the Q value of the inductor. The larger the value, the better the inductance performance. [0004] However, since the doping concentration of the high-resistance substrate is very low, an inversion or enhanced conductive layer is easily forme...

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Problems solved by technology

[0005] Although the prior art has proposed some schemes for improving the Q value of passive device inductors, there are some defects or deficiencies in these prior art schemes

[0006] Specifically, for the method of preventing the surface conductive layer, ion implantation can be adopted (referring to the Chinese patent application whose application number is 201310386024.0), or a layer of polysilicon / amorphous silicon can be deposited (referring to the Chinese patent application whose application number is 201310385895.0 ) to generate a large number of defects on the silicon surface to form charge recombination centers. The disadvantages of these two methods are: 1. At least one additional process is required; Leads to fewer defects resulting in poorer thermal stability

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