Low-temperature polysilicon array substrate and manufacturing method thereof
A low-temperature polysilicon and array substrate technology, used in transistors, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of high substrate temperature, insufficient heat dissipation, and substrate inability to drive, and achieve good heat dissipation effect.
Active Publication Date: 2018-07-06
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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Problems solved by technology
The above-mentioned heat dissipation method of the substrate has the problem of insufficient heat dissipation, and the heat is still easily concentrated inside the substrate, causing the substrate temperature to be too high, and the above-mentioned substrate also has the problem that it cannot be driven in a low temperature environment
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[0023] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, Features and functions are described in detail below.
[0024] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the preferred embodiments with reference to the drawings. Through the description of specific implementation methods, the technical means and effects of the present invention to achieve the intended purpose can be understood more deeply and specifically, but the attached drawings are only for reference and description, and are not used to explain the present invention limit.
[0025] figure 2 is a schematic cross-sectional view of a low-temperature polysilicon array substrate provided by an embodiment of the present invention. image 3 It is a schematic diagram of the struc...
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The embodiment of the present invention discloses a low-temperature polysilicon array substrate and a manufacturing method thereof. The low-temperature polysilicon array substrate includes: a substrate, a heat dissipation layer disposed on the surface of the substrate, a thin film transistor array disposed above the heat dissipation layer, and a thin film transistor array disposed on the thin film transistor array. The upper light-emitting layer, drying layer and packaging cover plate, the heat dissipation layer includes a plurality of first heat dissipation strips and a plurality of second heat dissipation strips located below the thin film transistor array, and a plurality of first heat dissipation strips and a plurality of second heat dissipation strips are formed by crossing grid structure. The low-temperature polysilicon array substrate and the manufacturing method thereof of the present invention can evenly and completely dissipate the heat generated by the array substrate to the outside.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a low-temperature polysilicon array substrate and a manufacturing method thereof. Background technique [0002] With the development of flat panel displays, the demand for panels with high resolution and low energy consumption has been continuously raised. Low-temperature polysilicon (LowTemperature Poly-silicon, LTPS) is obtained in liquid crystal display (Liquid Crystal Display, LCD) and active-matrix organic light emitting diode (Active-matrix organic light emitting diode, AMOLED) display technology due to its high electron mobility. It has attracted the attention of the industry and is regarded as an important material for realizing low-cost full-color flat panel display. For flat-panel displays, the use of low-temperature polysilicon materials has the advantages of high resolution, fast response, high brightness, high aperture ratio, and low energy consumption, and low-tem...
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IPC IPC(8): H01L23/367H01L27/12H01L29/786
Inventor 孙站
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD