Low-temperature polysilicon array substrate and manufacturing method thereof
A low-temperature polysilicon and array substrate technology, which is applied in the direction of transistors, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problems of high substrate temperature, insufficient heat dissipation, and inability to drive the substrate, and achieve good heat dissipation effect
Active Publication Date: 2016-03-23
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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Problems solved by technology
The above-mentioned heat dissipation method of the substrate has the problem of insufficient heat dissipation, and the heat is still easily concentrated inside the substrate, causing the substrate temperature to be too high, and the above-mentioned substrate also has the problem that it cannot be driven in a low temperature environment
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[0023] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, Features and functions are described in detail below.
[0024] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the preferred embodiments with reference to the drawings. Through the description of specific implementation methods, the technical means and effects of the present invention to achieve the intended purpose can be understood more deeply and specifically, but the attached drawings are only for reference and description, and are not used to explain the present invention limit.
[0025] figure 2 is a schematic cross-sectional view of a low-temperature polysilicon array substrate provided by an embodiment of the present invention. image 3 It is a schematic diagram of the struc...
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The embodiment of the invention discloses a low-temperature polysilicon array substrate and a manufacturing method thereof. The low-temperature polysilicon array substrate comprises a base, a heat radiation layer which is arranged on the surface of the base, thin-film transistor arrays which are arranged on the heat radiation layer, and a light-emitting layer, a drying layer and a packaging cover plate which are arranged on the thin-film transistor arrays. The heat radiation layer comprises multiple first heat radiation strips and multiple second heat radiation strips which are arranged below the thin-film transistor arrays. The multiple first heat radiation strips and the multiple second heat radiation strips are intersected so that a grid structure is formed. According to the low-temperature polysilicon array substrate and the manufacturing method thereof, heat generated by the array substrate can be uniformly and completely radiated to the outside.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a low-temperature polysilicon array substrate and a manufacturing method thereof. Background technique [0002] With the development of flat panel displays, the demand for panels with high resolution and low energy consumption is constantly being raised. Low temperature polysilicon (LowTemperaturePoly-silicon, LTPS) has been valued by the industry in liquid crystal display (Liquid Crystal Display, LCD) and active matrix organic light emitting diode (Active-matrixorganic light emitting diode, AMOLED) display technology due to its high electron mobility. It is regarded as an important material to realize low-cost full-color flat panel display. For flat-panel displays, the use of low-temperature polysilicon materials has the advantages of high resolution, fast response, high brightness, high aperture ratio, and low energy consumption, and low-temperature polysilicon can be produce...
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IPC IPC(8): H01L23/367H01L27/12H01L29/786
CPCH01L23/367H01L27/1214H01L29/78672
Inventor 孙站
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD