Wafer processing method

A processing method and wafer technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of semiconductor device failure, affecting the performance and reliability of semiconductor devices, semiconductor device structure pollution, etc., to achieve adhesion Enhanced, easy-peel removal

Active Publication Date: 2016-03-30
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the prior art, after the protective film is removed by the film removal process, a large amount of attachments will remain on the surface of the semiconductor device structure, which will pollute the semiconductor device structure, affect the performance and reliability of the formed semiconductor device, and even cause The formed semiconductor device fails

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer processing method
  • Wafer processing method
  • Wafer processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] As mentioned in the background technology, after the protective film is removed by the film removal process, a large amount of attachments will remain on the surface of the semiconductor device structure, which will pollute the semiconductor device structure, affect the performance and reliability of the formed semiconductor device, and even Cause the formed semiconductor device to fail.

[0032] For details, please refer to figure 1 , figure 1 It is a schematic cross-sectional structure diagram of forming a protective film on the surface of a semiconductor device structure located on one side of the wafer according to an embodiment of the present invention, including: a substrate 100; a device structure 110 located on the first surface 101 of the substrate 100; located on the surface of the device structure 110 and The conductive plug 111 on the surface of the substrate 100, the conductive plug 111 is electrically connected to the device structure 110 and the substrat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a wafer processing method, and the method comprises the steps: providing a to-be-processed substrate which is provided with a first surface and a second surface opposite to the first surface, wherein the first surface of the to-be-processed substrate is provided with a device layer; forming a protection film on the surface of the device layer; carrying out the surface treatment of the protection film, forming a plurality of recessed parts in the protection film, and enabling the surface of the protection film to be rough; carrying out the turn-over technology of the second surface of the to-be-processed substrate after the surface treatment of the protection film; and peeling the protection film off from the surface of the device layer through the film-removing technology after the turn-over technology. The method can enable the surface of a water to be clean, and facilitates the improvement of the performance and reliability of a semiconductor device formed on the surface of the wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer processing method. Background technique [0002] With the continuous development of semiconductor manufacturing technology, the manufacturing method of semiconductor devices and the structure of semiconductor devices are becoming more and more complex. Therefore, only performing semiconductor processes on one side of the wafer cannot meet the technical needs of continuous development. For example, the manufacturing process of the MEMS pressure sensor, the manufacturing process of the back-illuminated (BSI, Backside Illuminated) image sensor, the manufacturing process of the through-silicon via (TSV, ThroughSiliconVia) structure, or the packaging process of the wafer all need to be on one side of the wafer After the semiconductor device structure is formed on the surface, the back-end process is performed on the other side of the wafer. [0003] In ord...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02H01L21/683
Inventor 郑超王伟徐伟
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap