Semiconductor structure and rework method
A semiconductor and process technology, applied in the field of semiconductor production, can solve problems such as complex rework process, and achieve the effect of saving process steps and production costs
Active Publication Date: 2018-07-10
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0005] However, in the actual production process, when the silicon-containing organic bottom anti-reflective coating is applied in the photolithography process, if there is a defect in the photoresist layer formed on the silicon-containing organic bottom anti-reflective coating, it is necessary to The product is reworked to remove the defective photoresist layer, and the existing rework process is complex
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[0032] As mentioned in the background art, in actual production, the rework process for products with silicon-containing organic bottom anti-reflective coatings is relatively complicated.
[0033] The study found that the current removal of defective photoresist layer usually adopts plasma etching process or ashing process, and the gas used in plasma etching process or ashing process is mainly O 2 , in the process of removing the photoresist layer, due to the silicon element in the silicon-containing organic bottom anti-reflective coating, the silicon element is easily combined with oxygen to form silicon oxide crystals, so that the silicon-containing organic bottom layer at the bottom of the photoresist layer The performance and structure of the anti-reflective coating will change, so it cannot continue to be used as an anti-reflective coating, and further affect the etching performance and defect rate of the anti-reflective coating, so an additional process is required to rem...
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Abstract
A semiconductor structure and a method of rework are disclosed. The method of rework comprises the steps of providing a substrate on which a silicon-containing organic bottom antireflective coating is formed; forming a protective layer on the silicon-containing organic bottom antireflective coating; forming, on the protective layer, a first photoresist layer with defects therein; and removing the first photoresist layer where the defects exist to expose the surface of the protective layer. The protective layer can prevent external oxide and silicon in the silicon-containing organic bottom antireflective coating from forming crystal substance of silicon oxide or other defects in the step of removing the first photoresist layer with the defects, thus, the silicon-containing organic bottom antireflective coating is well preserved after the removal of the first photoresist layer with the defects without additional physical or chemical steps to remove the silicon-containing organic bottom antireflective coating at the bottom of the first photoresist layer, in this way, the process steps of the rework is saved, and the manufacturing cost is saved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a rework method. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors is continuously reduced, and the size and spacing of lithography patterns defined by lithography processes are firstly required to be smaller and smaller. In order to meet the requirements of lithography, in addition to the continuous upgrading of lithography equipment, people also use other technologies to improve the quality and precision of lithography, and the use of anti-reflective coating technology (ARC, Anti-Reflective Coating) is one of them. one. The function of forming an anti-reflection coating is to prevent the exposure light from being reflected at the substrate interface after passing through the photoresist layer, because the reflected light returning to the photoresist will interfere ...
Claims
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IPC IPC(8): H01L21/027
Inventor 郑喆张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP