Method for forming photoresist pattern in groove, trench isolation structure and manufacturing method thereof
A manufacturing method and trench isolation technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of limited effect and low strength, and achieve the effect of reducing photoresist residues
Active Publication Date: 2019-01-29
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
[0005] As the size of semiconductor devices becomes smaller and smaller, the feature size of the groove decreases, resulting in smaller and smaller photoresist patterns formed in the groove. The photoresist irradiated into the groove in the photolithography step The intensity of the light on the preparatory layer is getting lower and lower, which leads to more and more significant footing effect
At present, technicians try to reduce the photoresist residue in the groove by reducing the thickness of the photoresist preparation layer and reducing the wavelength of the light source used in lithography, but the effect is very limited
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[0032] It should be noted that the embodiments in the application and the features in the embodiments can be combined with each other if there is no conflict. Hereinafter, the present application will be described in detail with reference to the drawings and in conjunction with embodiments.
[0033] It should be noted that the terms used here are only for describing specific implementations, and are not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when “including” and / or “including” are used in this specification, it indicates There are features, steps, operations, devices, components, and / or combinations thereof.
[0034] For ease of description, spatially relative terms can be used here, such as "above", "above", "above the surface", "above", etc., to describe as shown...
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The invention discloses a method for forming a photoresistance pattern in a groove, a shallow trench isolation structure and a manufacture method thereof. In the method for forming the photoresistance pattern in the groove, the groove comprises a first sidewall and a second sidewall which are arranged oppositely. The method for forming the photoresistance pattern in the groove comprises steps of: forming a photoresistance preparation layer in the groove; photoetching the photoresistance preparation layer in order to remove a portion, close to the second sidewall, of the photoresistance preparation layer and using the rest of the photoresistance preparation layer as a photoresistance layer; and forming a photoresistance reaction layer in the sidewall of the photoresistance layer, wherein the photoresistance reaction layer is formed by the reaction of chemical micro-shrink material and the photoresistance layer, and the photoresistance reaction layer and the photoresistance layer form the photoresistance pattern. In the method for forming the photoresistance pattern in the groove, the intensity of light irradiated onto the photoresistance preparation layer in the groove in the step of photoetching the photoresistance preparation layer is enhanced such that the light may easily pass through the photoresistance preparation layer to the bottom of the groove. Thus, the photoresistance preparation layer on the bottom of the groove is easy to be removed by photoetching and photoresistance residues in the groove are reduced.
Description
Technical field [0001] This application relates to the technical field of semiconductor integrated circuits, and in particular to a method for forming a photoresist pattern in a groove, a trench isolation structure and a manufacturing method thereof. Background technique [0002] During the manufacturing process of the semiconductor device, it is usually necessary to form a photoresist pattern in the groove, and then perform subsequent processing on the exposed groove to form a semiconductor functional area at the bottom of the groove. For example, after forming the photoresist pattern in the groove, the exposed groove is etched to increase the depth of the groove. For another example, in the manufacturing process of the trench isolation structure, a photoresist pattern covering half of the shallow trench is first formed, and then the exposed shallow trench is ion implanted to form an ion implantation area in the substrate at the bottom of the shallow trench , Thereby improving ...
Claims
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IPC IPC(8): H01L21/762H01L21/027
Inventor 樊佩申杨晓松
Owner SEMICON MFG INT (SHANGHAI) CORP