Array substrate, manufacturing method thereof, and display device

Abstract

The invention discloses an array substrate, a manufacturing method thereof, and a display device. The main contents include: a gate insulating layer is arranged on one surface of an active layer, and a barrier insulating layer is arranged on the other surface, so that the The source layer is isolated from other adjacent first conductive layers, thereby avoiding the residue of the active layer from overlapping any first conductive layer, especially effectively preventing the residue of the active layer from overlapping the pixel electrode and the data line, Therefore, the problem of TFT electrical failure caused by overlapping is solved. At the same time, since the barrier insulating layer is added, and the thickness of the film layer can be adjusted appropriately, the height difference of the film layer surface of the entire array substrate after the film layer forms the active layer is reduced, and the smoothness of the film layer surface is improved. Therefore, when the slope angle of the surface of the film layer is small, the subsequent film layer can be deposited better, and the breakage of the film layer caused by the large height difference or the large slope angle of the film layer surface can be reduced.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] In the prior art, the preparation process of the active layer (semiconductor layer) can simultaneously deposit SiN x , a-Si, N+a-Si, and then perform a patterning process on the deposited mixed film layer to form a patterned active layer. [0003] However, in the specific preparation process, due to the preparation environment, equipment or other abnormal reasons, foreign matter such as dust and debris will inevitably be attached to the mixed film layer. process or attach during etching. During the dry etching process, due to the presence of foreign matter in certain positions of the mixed film layer, the gas used for dry etching cannot contact and react with the film layer, resulting in residues in the film layer, and further, such as figure 1 As shown, when the so...

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Problems solved by technology

[0004] Embodiments of the present invention provide an array substrate, a manufacturing method thereof, and a display device, which are used to solve the problem in the prior art that the TFT electrical process is poor due to the contact between the residue of the active layer and the conductive layer.

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