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A kind of finfet device structure and manufacturing method thereof

A device manufacturing method and device structure technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to facilitate source-drain contact, increase on-state current, and reduce parasitic resistance.

Active Publication Date: 2018-10-02
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention provides a U-shaped FinFET structure and a manufacturing method thereof, and proposes a new device structure on the basis of the existing FinFET technology, so that the gate length of the device is not limited by the size of the footprint, and effectively solves the problem of short channel The problem with the effect

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  • A kind of finfet device structure and manufacturing method thereof
  • A kind of finfet device structure and manufacturing method thereof
  • A kind of finfet device structure and manufacturing method thereof

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Embodiment Construction

[0040] In order to make the object, technical solution and advantages of the present invention clearer, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0041] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0042] see Figure 15 , the present invention provides a FinFET structure, including: a substrate 100; a first fin 210 and a second fin 220, and the first fin 210 and the second fin 220 are located above the substrate 100 and mutually Parallel; gate stack 300, the gate stack covers the substrate and part of the sid...

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Abstract

A FinFET device structure and manufacturing method thereof, comprising: a substrate (100); parallel first and second fins (210, 220) located above the substrate (100); a gate electrode stack (300) covering the substrate (100) and the side wall of a part of the first and second fins (210, 220); a source region (410) located in the region of the first fin (210) not covered by the gate electrode stack (300); a source end epitaxial region (240) located above one end of the first fin (210) and having a length less than 1 / 2 of the length of the fin; a drain region (420) located in the region of the second fin (220) not covered by the gate electrode stack (300); and a drain end epitaxial region (250) located in the second fin (220) and above one end opposite to the source region (410) epitaxial region and having a length less than 1 / 2 of the length of the fin. The above design effectively solves a problem caused by a short channel effect.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a FinFET. technical background [0002] Moore's Law states that the number of transistors that can be accommodated on an integrated circuit doubles every 18 months, and the performance also doubles at the same time. At present, with the development of integrated circuit technology and technology, devices such as diodes, MOSFETs, and FinFETs have appeared successively, and the size of nodes has been continuously reduced. However, since 2011, silicon transistors have approached the atomic level and reached the physical limit. Due to the natural properties of this material, in addition to the short-channel effect, the quantum effect of the device also has a great impact on the performance of the device. The speed and performance of silicon transistors are hard to break through. Therefore, how to greatly improve the performance ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/78
Inventor 尹海洲刘云飞李睿
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI