How the transistor is formed
A technology of transistors and dummy gates, which is applied in the field of semiconductor manufacturing, can solve the problems of reduced device density, unstable performance of high-K metal gate transistors, and difficulty in controlling the process of high-K metal gate transistors, etc., and achieves the effect of reducing the difficulty of the process
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[0034] As mentioned in the background art, with the shrinking of semiconductor process nodes, the process difficulty of forming high-k metal gate transistors increases, and the formed high-k metal gate transistors have poor performance.
[0035] The forming process of the high-K metal gate transistor is a gate last (Gate Last) process, Figure 1 to Figure 4 It is a schematic cross-sectional structure diagram of the formation process of a high-K metal gate transistor according to an embodiment of the present invention.
[0036] Please refer to figure 1 A substrate 100 is provided, the surface of the substrate 100 has a dummy gate layer 101, the material of the dummy gate layer 101 is polysilicon, and the dummy gate layer 101 occupies a space and a position for a subsequently formed metal gate.
[0037] Please refer to figure 2 , forming a dielectric layer 102 on the surface of the substrate 100 , the dielectric layer 102 covers the sidewall of the dummy gate layer 101 , and ...
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