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Method for detecting bottom defects of grid electrode

A gate and defect technology, which is applied in the field of detecting the bottom defects of the gate, can solve the problems of easily damaged bottom defects of the gate, unable to effectively detect the bottom defects of the gate, etc., and achieve the effect of accurate detection

Active Publication Date: 2016-04-20
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method still cannot effectively detect the bottom defect of the gate, and this method is easy to damage the bottom defect of the gate

Method used

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  • Method for detecting bottom defects of grid electrode
  • Method for detecting bottom defects of grid electrode
  • Method for detecting bottom defects of grid electrode

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Embodiment Construction

[0027] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0028] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0029] For the convenience of description, spatially relative terms may be used here, such as "on ...", "over ...", "on the surface of ...", "above", etc., to describe...

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Abstract

The invention discloses a method for detecting bottom defects of a grid electrode. The grid electrode is arranged in a chip. The method comprises steps of removing parts on the upper surface of the grid electrode in the chip; removing a grid oxide layer under the grid electrode and a side wall oxide layer on the side wall of the grid electrode via wet etching; bonding the upper surface of the grid electrode to a bonding plate; and detecting bottom defects of the grid electrode. In this way, the bottom of the grid electrode can be directly observed from the above, thereby achieving the objective to detect the bottom defects of the grid electrode more efficiently and precisely.

Description

technical field [0001] The present application relates to the technical field of failure analysis of semiconductor integrated circuits, in particular, to a method for detecting bottom defects of gates. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, chips need to go through a series of processes such as etching and deposition, and each process may introduce various defects. Especially in the fabrication process of the gate, due to the small feature size of the gate, it is easy to generate a footing defect in the lower half of the gate, such as a gap or a protrusion in the lower half of the gate. The bottom defect will cause leakage current between the gate and surrounding devices, which will affect the performance of the device and even cause the device to fail. [0003] At present, technicians usually use failure analysis to detect and analyze the bottom defects of the gate to help integrated circuit designers find design de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
Inventor 殷原梓
Owner SEMICON MFG INT (SHANGHAI) CORP