Fluorescent material and preparation method thereof

A fluorescent material and a manufacturing method technology, applied in the field of fluorescent materials, can solve the problem that N-based fluorescent materials cannot be near-ultraviolet LED chip luminescent materials, and achieve the effects of good product consistency, environmental friendliness, and high color reproduction.

Inactive Publication Date: 2016-05-04
ANHUI UNIVERSITY OF ARCHITECTURE
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] The purpose of the present invention is for the Ce existing in the prior art 3+ Mono-doped MgLu 1-y Si 2 o 5 The technical problem that N-based fluorescent materials cannot be widely used as light-emitting materials for near-ultraviolet LED chips provides a kind of Mn 2+ 、Ce 3+ Co-doped MgLu 1- y Si 2 o 5 N-based fluorescent material, the half-maximum width of its excitation spectrum is 290nm~370nm, which can cover the 365nm emission peak of the near-ultraviolet LED chip, so that the fluorescent material has a high luminous efficiency

Method used

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  • Fluorescent material and preparation method thereof
  • Fluorescent material and preparation method thereof
  • Fluorescent material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0055] Preparation of Ce 3+ Single-doped fluorescent material MgLu 0.98 Si 2 o 5 N: 0.02Ce 3+ .

[0056] The general chemical formula of the fluorescent material is Mg 1-x Lu 1-y Si 2 o 5 N:yCe 3+ , xMn 2+ , means Mn 2+ 、Ce 3+ The x and y of the component ratio take the values ​​of x=0 and y=0.02 respectively, then the general chemical formula is MgLu 0.98 Si 2 o 5 N: 0.02Ce 3+ , which can also be expressed as MgLu 0.98 Ce 0.02 Si 2 o 5 N. According to the chemical formula MgLu 0.98 Si 2 o 5 N: 0.02Ce 3+ For every 100 grams of sample, weigh 11.56 grams of analytically pure MgO and 11.56 grams of analytically pure Si 3 N 4 10.06 grams, the purity is analytically pure SiO 2 21.54 g, the purity is analytically pure CeO 2 0.99 g, analytically pure Lu 2 o 3 55.91 grams. Put the above weighed MgO, Si 3 N 4 , SiO 2 , CeO 2 、Lu 2 o 3 , MnCO 3 Put into the Si built in the grinding device 3 N 4 Grind in a mortar made of high-quality materials, use ...

Embodiment 2

[0061] Preparation of Mn 2+ 、Ce 3+ Co-doped fluorescent material Mg 0.9 Lu 0.98 Si 2 o 5 N: 0.002Ce 3+ , 0.1Mn 2+ .

[0062] The general chemical formula of the fluorescent material is Mg 1-x Lu 1-y Si 2 o 5 N:yCe 3+ , xMn 2+ , means Mn 2+ 、Ce 3+ The values ​​of x and y of the component ratio are respectively x=0.1 and y=0.02, then the general chemical formula is Mg 0.9 Lu 0.98 Si 2 o 5 N: 0.02Ce 3+ , 0.1Mn 2+ , which can also be expressed as Mg 0.9 mn 0.1 Lu 0.98 Ce 0.02 Si 2 o 5 N. According to the chemical formula Mg 0.9 Lu 0.98 Si 2 o 5 N: 0.02Ce 3+ , 0.1Mn 2+ For every 100 grams of sample, weigh 10.29 grams of analytically pure MgO and 10.29 grams of analytically pure Si 3 N 4 9.95 grams of analytically pure SiO 2 21.31 grams, the purity is analytically pure CeO 2 0.1 g, analytically pure Lu 2 o 3 56.34 grams of analytically pure MnCO 3 3.26 grams. Put the above weighed MgO, Si 3 N 4 , SiO 2 , CeO 2 、Lu 2 o 3 , MnCO 3 Put int...

Embodiment 3

[0065] Preparation of Mn 2+ 、Ce 3+ Co-doped fluorescent material Mg 0.9 Lu 0.995 Si 2 o 5 N: 0.005Ce 3+ , 0.1Mn 2+ .

[0066] The general chemical formula of the fluorescent material is Mg 1-x Lu 1-y Si 2 o 5 N:yCe 3+ , xMn 2+ , where Mn 2+ 、Ce 3+ The values ​​of x and y of the component ratio are respectively x=0.1 and y=0.005, then the general chemical formula is Mg 0.9 Lu 0.995 Si 2 o 5 N: 0.005Ce 3+ , 0.1Mn 2+ , which can also be expressed as Mg 0.9 mn 0.1 Lu 0.995 Ce 0.005 Si 2 o 5 N. According to the chemical formula Mg 0.9 Lu 0.995 Si 2 o 5 N: 0.005Ce 3+ , 0.1Mn 2+ For every 100 grams of sample, weigh 10.30 grams of analytically pure MgO and 10.30 grams of analytically pure Si 3 N 4 9.53 grams, the purity is analytically pure SiO 2 21.32 grams, the purity is analytically pure CeO 2 0.24 g, analytically pure Lu 2 o 3 56.19 grams of analytically pure MnCO 3 3.26 grams. Put the above weighed MgO, Si 3 N 4 , SiO 2 , CeO 2 、Lu 2 o...

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Abstract

The invention discloses a fluorescent material and a preparation method thereof. The fluorescent material is prepared through a solid phase roasting technology, and has a chemical general formula of Mg1-xLu1-ySi2O5N:yCe<3+>,xMn<2+>, wherein the Mg1-xLu1-ySi2O5N is a matrix, and Ce<3+> and Mn<2+> are luminescence ions co-doped in the matrix; and x and y respectively represent component ratios, x is greater than 0 and lower than 0.3, y is greater than 0 and lower than 0.04. The fluorescent material has two excitation peaks in 320nm and 355nm, and the full width at half maximum is 290-370nm, and covers the 365nm emission peak of a near ultraviolet LED chip. The fluorescent material has double emission peaks in 602nm and 673nm, the emission intensities of the emission peaks can be adjusted through changing the ratio of the doped ion Mn<2+>; the fluorescent material has good color rendering property; and the roasting technology is adopted, so the preparation cost is low.

Description

technical field [0001] The present invention relates to a fluorescent material, in particular to a Ce 3+ , Mn 2+ Co-doped MgLuSi 2 o 5 An N-based fluorescent material suitable for the 365nm emission peak of a blue LED chip, and a manufacturing method thereof, belong to the field of light-emitting materials. Background technique [0002] MgL 1-y Si 2 o 5 N-based fluorescent materials, due to the solid phase process, only need to control the ratio of raw materials and the process parameters consisting of firing temperature, vacuum degree, atmosphere pressure, etc. The manufacturing process is simple, the cost is low, and the product consistency is good. It is suitable for Industrialized production has attracted much attention. Ce 3+ Mono-doped MgLu 1-y Si 2 o 5 The N-based fluorescent material has a wider emission spectrum at 400nm, the half-maximum width of the emission spectrum is 370nm-430nm, and there is an emission peak around 400nm. Ce 3+ Mono-doped MgLu 1-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/79
Inventor 解文杰
Owner ANHUI UNIVERSITY OF ARCHITECTURE
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