Light-emitting device and preparation method thereof as well as display device

A technology for light-emitting devices and quantum dots to emit light, which can be used in chemical instruments and methods, semiconductor/solid-state device manufacturing, light-emitting materials, etc.

Active Publication Date: 2016-05-04
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, because the blue light quantum dots emit a short blue light band (430-470nm), the excitons formed by the electrons and holes have high energy, and the energy is easily transferred to the green light quantum dots with a relatively long emission wavelength (the green light band is 500nm). ~560nm), red light quantum dots (the red light band is 620-780nm); green light quantum dots emit green light shorter than red light, and the excitons formed by electrons and holes have higher energy, and the energy is easily transferred to the light-emitting quantum dots. Red light quantum dots with relatively long wavelengths, resulting in enhanced luminescence of long-w...

Method used

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  • Light-emitting device and preparation method thereof as well as display device
  • Light-emitting device and preparation method thereof as well as display device
  • Light-emitting device and preparation method thereof as well as display device

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preparation example Construction

[0063] On the basis of the above, an embodiment of the present invention also provides a method for preparing the above-mentioned light-emitting device 01, the preparation method comprising: forming an anode 10, a hole transport layer 11, a light-emitting functional layer 30, and an electron transport layer 21 arranged in layers in sequence and cathode 20; wherein, the step of forming the above-mentioned luminescent functional layer 30 includes: forming at least two quantum dot luminescent layers 31 that emit light of different colors; and forming a transparent insulating layer between any adjacent two layers of quantum dot luminescent layers 31 Layer 32.

[0064] Here, the aforementioned quantum dot light-emitting layer 31 can be formed by any method of spin coating, microcontact printing, inkjet printing, and roll-to-roll printing.

[0065] Wherein, when the light-emitting device 01 is a vertical light-emitting device, that is, the anode 10 is directly formed on the substrat...

specific Embodiment 1

[0076] Embodiment 1 of the present invention provides a kind of Figure 4 The preparation method of the positive white light QLED shown, the specific steps of the preparation method are as follows:

[0077] Step S101, preparing the anode 10 on the base substrate 100;

[0078] A layer of ITO is deposited on the transparent glass substrate 100 by magnetron sputtering as a transparent anode (transmittance close to 90%), and its thickness ranges from 70 to 150 nm. Treat it with an appropriate annealing temperature to reduce its square resistance (ie, sheet resistance) to 10-40Ω / □ (the symbol "□" indicates a square).

[0079] Surface treatment is carried out to the surface of anode 10 by mechanical polishing again, so that its surface roughness Ra<2nm, Rmax<20nm; Work function (making it 4.8eV), reducing the hole injection barrier.

[0080] Step S102, forming a hole transport layer 11 on the anode 10;

[0081] The above-mentioned hole transport layer 11 can be prepared by spin ...

specific Embodiment 2

[0092] Embodiment 1 of the present invention provides a kind of Figure 5 The preparation method of the inverted white light QLED shown, the specific steps of the preparation method are as follows:

[0093] Step S201, preparing the cathode 20 on the base substrate 100;

[0094] A layer of ITO is deposited on the transparent glass substrate 100 by magnetron sputtering as a transparent cathode (transmittance close to 90%), and its thickness ranges from 70 to 150 nm. Treat it with an appropriate annealing temperature to reduce its square resistance to 10-40Ω / □.

[0095] Then the anode 10 surface is surface treated by mechanical polishing, so that its surface roughness Ra<2nm, Rmax<20nm; The work function reduces the electron injection barrier.

[0096] Step S202, forming an electron transport layer 21 on the cathode 20;

[0097] The above-mentioned electron transport layer 21 can be prepared by spin coating, coating or inkjet printing film forming process, and its thickness ran...

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Abstract

Embodiments of the invention provide a light-emitting device and a preparation method thereof as well as a display device, relating to the field of display technologies and solving a problem of light-emitting color cast due to high-energy exciton transfer in the light-emitting device while reducing the energy consumption of the device. The light-emitting device comprises an anode and a cathode which are opposite, a hole transfer layer close to the anode, an electron transfer layer close to the cathode and a light-emitting function layer arranged between the hole transfer layer and the electron transfer layer, wherein the light-emitting function layer comprises at least two layers of quantum dot light-emitting layers capable of emitting different colors of light and a transparent insulating layer arranged between any two adjacent layers of quantum dot light-emitting layers. The method is used for preparing the light-emitting device and the display device comprising the light-emitting device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a light-emitting device, a preparation method thereof, and a display device. Background technique [0002] Quantum dot (Quantumdot) has the advantages of tunable luminescence wavelength, narrow luminescence band (15-30nm), good light, heat and chemical stability, and is easy to prepare by solution method. It is widely used in quantum dot electroluminescent devices (Quantumdotlight- emitting diode, referred to as QLED). Since QLED combines the unique optoelectronic advantages of quantum dot materials and the relatively mature OLED (Organic light-emitting diode, organic light-emitting diode) solution film-forming process, it is expected to be applied to a new generation of high-color quality, low-power flat-panel display and lighting. increasing attention of those skilled in the art. [0003] At present, QLED is mainly used as a white light source, such as figure 1 As shown, th...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/131H10K71/00Y10S977/773Y10S977/777C09K11/02C09K11/565C09K11/661C09K11/883H05B33/10H05B33/14Y02E10/549H01L31/035218H01L21/02601H10K30/35H10K39/30H10K50/12H10K50/80H10K59/60H10K85/1135H01L31/101
Inventor 徐威舒适何晓龙姚继开
Owner BOE TECH GRP CO LTD
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