Film transistor, array substrate and liquid crystal panel

Abstract

The invention discloses a film transistor, an array substrate and a liquid crystal panel. The film transistor comprises a grid, an insulating layer, a semiconductor layer and an ohmic contact layer, a source electrode, and a leakage electrode, wherein the insulating layer, the semiconductor layer and the ohmic contact layer successively cover the grid, and the source electrode and the leakage electrode are formed on the ohmic contact layer and arranged at intervals, and the ohmic contact layer is a nanocrystalline phase ohmic contact layer. Through above arrangment, the invention can reduces the light leakage current of the film transistor while reducing the dark state leakage current and reduces the light lekage current of the film transistor so as to improve the display quality of the display panel.

Description

technical field [0001] The invention relates to the field of liquid crystal display, in particular to a thin film transistor, an array substrate and a liquid crystal panel. Background technique [0002] With the development of science and technology, liquid crystal display technology has been developed rapidly. As an important part of liquid crystal display technology, thin film transistors (TFTs) need to have more and more excellent performances. [0003] In order to make the TFT have a smaller dark-state leakage current, a method in the prior art is: an amorphous phase ohmic contact layer is introduced between the source and drain electrodes and the semiconductor layer, the amorphous phase ohmic contact layer includes an amorphous phase film, The amorphous phase film is formed by doping the semiconductor layer with a high concentration of P element. Although the amorphous phase ohmic contact layer can effectively reduce the dark state leakage current of the TFT, it is ver...

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Problems solved by technology

[0003] In order to make the TFT have a smaller dark-state leakage current, a method in the prior art is: an amorphous phase ohmic contact layer is introduced between the source and drain electrodes and the semiconductor layer, the amorphous phase ohmic contact layer includes an amorphous phase film, The amorphous phase film is formed by doping the semiconductor layer with a high concentration of P element. Although the amorphous phase ohmic contact layer can effectively reduce the dark state leakage current of the TFT, it is very easy to cause the TFT to appear as figure 1 The higher photoleakage current shown, which in turn affects the display quality of the LCD panel

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