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Flat panel detector and preparation method

A flat-panel detector and substrate technology, applied in the field of sensors, can solve the problem of large leakage current in the dark state of photodiodes

Active Publication Date: 2020-07-17
HEFEI BOE OPTOELECTRONICS TECH +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The embodiment of the present invention provides a flat panel detector and its preparation method to solve the problem that the dark-state leakage current of the photodiode in the flat panel detector is too large

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  • Flat panel detector and preparation method

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Embodiment Construction

[0048] In order to make the purpose, technical solution and advantages of the present application clearer, the embodiments of the present application will be described in detail below in conjunction with the accompanying drawings. In the case of no conflict, the embodiments of the present application and the features in the embodiments can be combined arbitrarily with each other.

[0049] In the drawings, the size of each component, the thickness of a layer, or a region is sometimes exaggerated for the sake of clarity. Therefore, one aspect of the present invention is not necessarily limited to the dimensions, and the shapes and sizes of components in the drawings do not reflect actual scales. In addition, the drawings schematically show ideal examples, and one aspect of the present invention is not limited to the shapes, numerical values, and the like shown in the drawings.

[0050] Ordinal numerals such as "first", "second", and "third" in this specification are provided to...

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Abstract

The invention discloses a flat panel detector and a preparation method. The flat panel detector comprises an underlying substrate; a first electrode layer which is arranged on one side of the underlying substrate; a photoelectric conversion layer which is arranged on one side, deviating from the underlying substrate, of the first electrode layer, wherein the photoelectric conversion layer is provided with a first surface deviating from one side of the first electrode layer; an insulating structure layer which is arranged on the side, deviating from the underlying substrate, of the photoelectric conversion layer, wherein the distance between the surface of the side, deviating from the underlying substrate, of the insulating structure layer and the underlying substrate is less than or equalto the distance between the first surface and the underlying substrate so as to expose the first surface; and a second electrode layer which is arranged on one side, deviating from the underlying substrate, of the insulating structure layer, wherein the orthographic projection of the second electrode layer on the underlying substrate covers the orthographic projection of the photoelectric conversion layer on the underlying substrate. According to the flat panel detector, the orthographic projection of the second electrode layer on the underlying substrate is set to cover the orthographic projection of the photoelectric conversion layer on the underlying substrate so that the dark-state leakage current of the photodiode is reduced and the photoelectric characteristic of the flat panel detector is improved.

Description

technical field [0001] The present disclosure relates to the technical field of sensors, and more particularly, to a flat panel detector and a preparation method. Background technique [0002] X-ray detection is widely used in modern medical image detection. At present, the most advanced direct digital X-ray photography (Digital Radiography, DR) is under the control of a computer with image processing function, using one-dimensional or two-dimensional X-ray detectors to directly Convert X-ray information into digital image information. The key component in the two-dimensional flat panel detection technology is the flat panel detector (Flat Panel Detector, FPD) that acquires the image. [0003] In the flat panel detector using PIN photodiode, the dark state leakage current generated by the photodiode structure is relatively large, which affects the photoelectric characteristics of the flat panel detector. Contents of the invention [0004] Embodiments of the present inven...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14609H01L27/14643H01L27/14687Y02P70/50
Inventor 宫奎张志海
Owner HEFEI BOE OPTOELECTRONICS TECH
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