Mask group suitable for multi-overlay multi-time sequence photoetching pattern and fabrication method of mask group

A photolithographic pattern and mask technology, which is applied to the photoengraving process of the pattern surface, the original for optical mechanical processing, optics, etc. Micro-machining flexibility and other issues, to achieve the effect of facilitating the processing process, saving the quantity and reducing the cost

Pending Publication Date: 2016-06-01
BEIHANG UNIV
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Problems solved by technology

[0005] The present invention provides a mask group and a manufacturing method suitable for multi-sequence photolithography patterns that are overlaid multiple times, and is used to solve the problem th

Method used

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  • Mask group suitable for multi-overlay multi-time sequence photoetching pattern and fabrication method of mask group
  • Mask group suitable for multi-overlay multi-time sequence photoetching pattern and fabrication method of mask group
  • Mask group suitable for multi-overlay multi-time sequence photoetching pattern and fabrication method of mask group

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Example Embodiment

[0027] The specific embodiments of the present invention will be described in further detail below in conjunction with the drawings and embodiments. The following examples are used to illustrate the present invention, but not to limit the scope of the present invention.

[0028] Embodiment 1 of the present invention provides a mask set suitable for multiple time sequence lithography patterns for multiple engraving, including multiple masks, the number of masks is m+1, and m is the number of engravings, among them,

[0029] Each mask plate is evenly divided into a plurality of pattern areas, the total area of ​​the pattern areas is equal to the surface area of ​​the mask plate, and the number of pattern areas is at least m+1. If in order to highlight the diversification of the mask processing sequence, each mask is evenly divided A pattern area, m is the number of over-engraving.

[0030] Each pattern area is provided with a light-shielding layer, the light-shielding layer is provi...

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Abstract

The invention provides a mask group suitable for multi-overlay multi-time sequence photoetching pattern and a fabrication method of the mask group. The mask comprises a plurality of masks, the number of the masks is (m+1), m is overlay frequencies, a plurality of pattern regions are uniformly divided on each mask, the total area of the pattern region is equal to the surface area of the mask, the number of pattern regions is at least (m+1), a shading layer is arranged on each pattern region, transmitting patterns are formed on the shading layer, the types of the transmitting patterns are (m+1), the transmitting patterns formed on pattern region at the same position of each mask are different, (m+1) transmitting patterns at the same position of the mask is arranged to be a set of overlay group, and the overlay groups at arbitrary two corresponding positions are different. During multi-overlay process of the mask group, the sequence arrangement mode of different time sequences can be acquired without considering the processing sequence of a pattern structure, the processing flows of different time sequences are facilitated, meanwhile, the number of the masks is saved, and the cost is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to a mask plate group and a manufacturing method suitable for multiple overlaying and multi-sequence photolithography patterns. Background technique [0002] Photolithography technology is a technology for constructing semiconductor MOS transistors and circuits on a flat silicon wafer, and is a precise microfabrication technology. [0003] When the existing photolithography process performs multiple overlays, it generally performs processing according to a fixed processing sequence. Take the cross pattern engraved three times as an example, such as figure 1 Four kinds of cross figures (1), (2), (3) and (4) participating in the engraving process three times are shown. Such as figure 2 Four photolithographic patterns after overlaying of cross patterns are shown. Such as image 3 As shown, the mask plate is divided into a, b, c, d. In the process, the ge...

Claims

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Application Information

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Owner BEIHANG UNIV
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