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Polycrystal ingot furnace internally provided with heat exchanger and carrier gas heating device

A heating device and a technology for polycrystalline ingots, which are applied in the directions of polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve problems such as affecting the conversion efficiency of solar cells, reduce preparation energy consumption, inhibit impurity nucleation, The effect of reducing the impact

Active Publication Date: 2016-06-15
内蒙古上航新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon carbide impurities are electroactive, affecting conversion efficiency of solar cells

Method used

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  • Polycrystal ingot furnace internally provided with heat exchanger and carrier gas heating device
  • Polycrystal ingot furnace internally provided with heat exchanger and carrier gas heating device
  • Polycrystal ingot furnace internally provided with heat exchanger and carrier gas heating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0090] A polycrystalline ingot furnace with built-in heat exchanger and carrier gas heating device of the present invention, such as figure 2 As shown, the polycrystalline ingot furnace includes an ingot furnace body 10 , a heating device 60 and a heat exchanger 70 . The heat exchanger 70 and the heating device 60 are arranged inside the ingot furnace body 10 for heating the carrier gas. The heat exchanger 70 is arranged outside the heat insulation cage 14 built in the ingot furnace body 10, and the heating device 60 is arranged inside the heat insulation cage 14, between the heater 15 built in the ingot furnace body 10 and the heat insulation cage 14 , wherein the heater 15 is arranged inside the heat insulation cage 14 . The output end of the heat exchanger 70 communicates with the input end of the heating device 60 , the input end of the heat exchanger 70 communicates with the gas delivery pipe 50 for transporting the carrier gas, and the output end of the heating device ...

Embodiment approach 2

[0096] The difference between Embodiment 2 and Embodiment 1 is only that: a flow guiding device 20 is set in the polycrystalline ingot furnace, such as Figure 5 , Image 6 As shown, the flow guiding device 20 is used to divide the carrier gas into multiple beams of outgoing carrier gas flows, and the outgoing carrier gas flows are blown obliquely to different regions of the surface of the liquid silicon, forming carrier gas stress distributed around the center of the liquid silicon, and the carrier gas stress drives the liquid silicon. The silicon flows and forms a rotating flow field for circumferential flow in the liquid silicon. The air guide device 20 is provided with an air inlet 213 through which the carrier gas flows. The heating device adopts a heating tube, and the output end of the heating tube is communicated with the air inlet 213 of the flow guiding device 20 through the connecting pipe 61, and the input end is connected with the second heat exchanger 72 (if a p...

Embodiment approach 3

[0105] The difference between Embodiment 3 and Embodiment 1 is only that: the polycrystalline ingot furnace has a built-in guide device 30, such as Figure 14 , Figure 15 As shown, the flow guide device 30 is used to divide the carrier gas into multiple streams of outgoing carrier gas flows, and the outgoing carrier gas flows are respectively obliquely blown to different regions of the surface of the liquid silicon to form carrier gas stress distributed along the circumferential direction around the center of the liquid silicon, and the carrier gas The stress drives the liquid silicon to flow, and a rotating flow field for circumferential flow is formed in the liquid silicon. An air inlet 33 through which the carrier gas flows is provided on the outer surface of the flow guiding device 30 . The heating device adopts a heating tube, and the output end of the heating tube is communicated with the air inlet 33 of the flow guiding device 30 through the connecting pipe 61, and th...

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PUM

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Abstract

The invention discloses a polycrystal ingot furnace internally provided with a heat exchanger and a carrier gas heating device. The polycrystal ingot furnace comprises a drainage device assembled in the ingot furnace and used for conveying carrier gas into the furnace, a heater and a heat insulation cage. The heater is arranged in the heat insulation cage, and the drainage device is assembled on a heat insulation plate of the heat insulation cage. The polycrystal ingot furnace further comprises the heating device for heating carrier gas and the heat exchanger. The heating device and the heat exchanger are arranged in the ingot furnace, the heating device is arranged in the heat insulation cage, and the heat exchanger is arranged outside the heat insulation cage. The input end of the heat exchanger is communicated with a carrier gas conveying pipe, the output end of the heat exchanger is communicated with the input end of the heating device, and the output end of the heating device is communicated with the input end of the drainage device. Cold carrier gas is sequentially heated through the heat exchanger and the heating device to form hot carrier gas with high temperature, and then the hot carrier gas passes through the drainage device to blow silicon materials in a crucible, the supercooling degree of the liquid silicon component in the blowing area is reduced, and impurity nucleus forming and growth promoted by carrier gas in the liquid silicon are relieved or even eliminated.

Description

technical field [0001] The invention relates to a polycrystalline ingot casting furnace, in particular to a polycrystalline ingot casting furnace with a built-in heat exchanger and a carrier gas heating device, belonging to the field of crystal growth equipment. Background technique [0002] The polycrystalline ingot casting furnace 10 includes a furnace body 11 , a heat insulation cage 14 , a heater 15 , a heat exchange platform 16 , a drainage device 12 and an infrared detector 90 . The heater 15 includes a top heater and a side heater, and is arranged in the heat insulation cage 14; the heat exchange platform 16 is assembled in the lower furnace body through graphite columns and is located in the heat insulation cage 14. The crucible filled with silicon material is placed on the heat exchange platform 16, which is located in the side heater; the drainage device 12 penetrates and is assembled on the top heat insulation plate of the heat insulation cage, and the outlet at t...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 陈鸽其他发明人请求不公开姓名
Owner 内蒙古上航新能源有限公司
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