Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A polycrystalline ingot furnace with carrier gas heating device

A technology of heating device and polycrystalline ingot, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems affecting the conversion efficiency of solar cells, achieve the suppression of impurity nucleation and impurity nuclei growth, and promote volatilization , conducive to the effect of uniform distribution

Active Publication Date: 2017-12-08
重庆博视知识产权服务有限公司
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Silicon carbide impurities are electroactive, affecting conversion efficiency of solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A polycrystalline ingot furnace with carrier gas heating device
  • A polycrystalline ingot furnace with carrier gas heating device
  • A polycrystalline ingot furnace with carrier gas heating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0088] A kind of polycrystalline ingot casting furnace with carrier gas heating device of the present invention, as figure 1 , figure 2 As shown, the polycrystalline ingot furnace includes an ingot furnace body 10 and a heating device 60 for heating the carrier gas. The heating device 60 communicates with the ingot furnace body 10 for transporting the heated hot carrier gas to Inside the ingot casting furnace, the silicon material 19 in the crucible is blown, and the carrier gas carries the impurities volatilized in the silicon material 19 to the outside of the furnace to improve the purity and quality of the crystal.

[0089] The ingot furnace body 10 includes a furnace body 11, a cage frame 13, a lifting screw 131, a heat insulation cage 14, a heater 15, a heat exchange platform 16, a graphite column 17, a graphite tube 123, a drainage device 12, an infrared detector 90 and copper electrodes (not shown in the figure). The furnace body 11 includes an upper furnace body 111...

Embodiment approach 2

[0094] The difference between Embodiment 2 and Embodiment 1 is only that: a flow guiding device 20 is arranged in the polycrystalline ingot casting furnace, such as Figure 5 , Image 6 As shown, the flow guiding device 20 is used to divide the carrier gas into multiple beams of outgoing carrier gas flows, and the outgoing carrier gas flows are blown obliquely to different regions of the surface of the liquid silicon, forming carrier gas stress distributed around the center of the liquid silicon, and the carrier gas stress drives the liquid silicon. The silicon flows and forms a rotating flow field for circumferential flow in the liquid silicon. The air guide device 20 is provided with an air inlet 213 through which the carrier gas flows. The heating device 60 adopts the above-mentioned air heater, and the output end of the air heater communicates with the air inlet 213 of the flow guiding device 20 through the connecting pipe 61 (not shown in the figure), and the input end c...

Embodiment approach 3

[0103] The difference between Embodiment 3 and Embodiment 1 is only that: the polycrystalline ingot furnace has a built-in guide device 30, such as Figure 14 , Figure 15 As shown, the lower end of the drainage tube 122 of the drainage device 30 and the drainage device 12 is axially fixed. The deflector 30 is used to divide the carrier gas into multiple streams of outgoing carrier gas streams, and the outgoing carrier gas streams are blown obliquely to different areas of the surface of the liquid silicon, forming carrier gas stress distributed circumferentially around the center of the liquid silicon, and the carrier gas stress The liquid silicon is driven to flow, and a rotating flow field for circumferential flow is formed in the liquid silicon. The air guide device 30 is provided with an air inlet 33 through which the carrier gas flows. The heating device 60 adopts the above-mentioned heating tube arranged in the heat insulation cage, and the output end of the heating tu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a polycrystalline ingot furnace with a carrier gas heating device, which includes a drainage device assembled in the ingot furnace for delivering the carrier gas into the furnace, and a heating device for heating the carrier gas. The output end of the heating device is connected with the input end of the drainage device, and the input end is connected with the gas delivery pipe of the carrier gas. The cold carrier gas is first heated by the heating device to form a hot carrier gas with a higher temperature. The hot carrier gas blows the silicon material in the crucible through the drainage device; reduces the supercooling of the liquid silicon in the blowing area, reduces or even eliminates the liquid silicon The nucleation of impurities and the growth of impurity nuclei promoted by the carrier gas.

Description

technical field [0001] The invention relates to a polycrystalline ingot furnace, in particular to a polycrystalline ingot furnace with a carrier gas heating device, which belongs to the field of crystal growth equipment. Background technique [0002] The polycrystalline ingot casting furnace includes a furnace body, a heat insulation cage, a heater, a heat exchange platform, and a drainage device. The heater includes a top heater and a side heater, which are arranged in the heat insulation cage; the heat exchange platform is assembled on the lower furnace body through graphite columns and is located in the heat insulation cage. The crucible filled with silicon material is placed on the heat exchange platform and located in the side heater; the drainage device penetrates and is assembled on the top heat shield of the heat insulation cage, and its lower end outlet faces the center of the crucible for transporting carrier gas . The ingot casting furnace is heated on four side...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B28/06
CPCC30B28/06C30B29/06
Inventor 陈鸽其他发明人请求不公开姓名
Owner 重庆博视知识产权服务有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com