Shielded gate trench mosfet device and manufacturing method thereof
A technology of shielding gates and trenches, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of ineffective shrinkage of device units, poor device consistency, complicated manufacturing process, etc., and achieve easy control , reduce stepping, and reduce the effect of manufacturing difficulty
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[0064] Such as figure 2 Shown is the layout of the shielded gate trench MOSFET device in the first embodiment of the present invention; as Figure 3A Shown is the first embodiment of the present invention shielded gate trench MOSFET device along figure 2 The cross-sectional view of the AA' position in ; such as Figure 3B Shown is the first embodiment of the present invention shielded gate trench MOSFET device along figure 2 The sectional view of the BB' position in ; the shielded gate trench MOSFET device in the first embodiment of the present invention is described by taking an N-type device as an example, that is, in the first embodiment of the present invention, the first conductivity type is N-type, and the second The conductivity type is P-type; the structure of the P-type device can be obtained by exchanging the doped conductivity type of the device between N-type and P-type, and the description of the present invention does not describe the P-type device in detail...
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