Semiconductor light emitting device and manufacturing method thereof

Abstract

Embodiments of the present invention provide a semiconductor light-emitting device and a manufacturing method thereof. The light-emitting device includes an insulating substrate, a current diffusion layer, a light-emitting structure layer, and an insulating layer. The current spreading layer includes a first electrode connection part, a second electrode connection part, N contact parts located between the first electrode connection part and the second electrode connection part, and connecting between the first electrode connection part and the contact part, N+1 flattened portions between the N contact portions and between the second electrode connection portion and the contact portion, where N is a natural number. N+1 light-emitting structure layers are correspondingly arranged on N+1 flat parts, and each light-emitting structure layer includes: a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on the corresponding flat part, and the second semiconductor layer At least N grooves matched with N contact portions are formed on the side of the layer away from the active layer, the depth of the at least N grooves is smaller than the thickness of the second semiconductor layer, and the at least N contact portions are in contact with at least N grooves. correspond.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor light emitting device and a manufacturing method thereof. Background technique [0002] In order to make light emitting diodes (light emitting diodes, referred to as LEDs) work at higher voltages, one method currently used is to connect multiple LEDs in series and parallel, and the other is to use high-voltage LEDs (HV LEDs), which are used in At the chip level, the series-parallel connection of microcrystalline grains is realized. Compared with connecting multiple LEDs in series and parallel, high-voltage LEDs that realize microchip series-parallel connection at the chip level have the advantages of low packaging cost, low line loss, and avoiding consistency problems caused by wavelength, voltage, and brightness span. [0003] Existing high-voltage LEDs usually adopt a different-side vertical structure, and its two electrodes are on both sides of the LED epitaxial ...

AI Technical Summary

Problems solved by technology

[0003] Existing high-voltage LEDs usually adopt a different-side vertical structure, and the two electrodes are on both sides of the LED epitaxial layer. However, the LED package with a different-side vertical structure has a higher pre-voltage, which easily leads to excessive temperature of the LED.

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