Unlock instant, AI-driven research and patent intelligence for your innovation.

Light-emitting element

A light-emitting element and reflective technology, applied in electrical components, laser parts, lasers, etc., can solve the problems of reduced luminous efficiency or brightness saturation, light-emitting wavelength shift, etc., to reduce lattice distortion, high reliability, long life effect

Active Publication Date: 2016-07-13
SONY GRP CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, there is a shift in the emission wavelength from the light-emitting element, and a reduction in luminous efficiency or luminance saturation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting element
  • Light-emitting element
  • Light-emitting element

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0032] 2. Example 1 (light-emitting element of the present disclosure) and other examples.

[0033] [Description of the entire light-emitting element of the present disclosure]

[0034] In the following description, a laminated structure is formed on a light emitting element manufacturing substrate, assuming the end face (vertical surface) of the light emitting element manufacturing substrate when the light emitting element manufacturing substrate is cut through a virtual vertical surface in the light emitting end face. Then, based on the vertical surface, assuming an angle θ that will be described below in the direction in which the light-emitting end faces protrude outward 2 and θ 3 or angle θ 1The value of is positive, and it is assumed that the light-emitting end faces an angle θ in the direction of inward retraction 2 , θ 3 and θ 1 value is negative. In addition, the reflective end face includes at least: a second region of the reflective end face configured to have...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

There is provided a light-emitting element including a laminated structure including a first compound semiconductor layer having a first conductivity type, a second compound semiconductor layer having a second conductivity type different than the first conductivity type, and a third compound semiconductor layer formed between the first and second compound semiconductor layers and including an active layer. A second end surface of the second compound semiconductor layer and a third end surface of the third compound semiconductor layer are formed at respective second and third angles theta2 and theta3 relative to a virtual vertical direction of the laminated structure and satisfy the following relationship: "absolute value of theta3 is equal to or greater than 0 degree and smaller than absolute value of theta2".

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Japanese Priority Patent Application JP2013-239827 filed on Nov. 20, 2013, the entire contents of which are incorporated herein by reference. technical field [0003] The present disclosure relates to light emitting elements. Background technique [0004] The development of a semiconductor laser device that emits green light for practical use is in progress. Use may include, for example, an image display device or an indicator using a semiconductor laser element as a light source. However, a true green semiconductor laser element emitting light with a wavelength of about 530 nm has not been put into practical use, and only expensive and inefficient solid-state lasers have been used so far. However, in recent years, a semiconductor laser element configured to have a GaN compound semiconductor-based and emit true green light has been reported, and practical use of the semiconducto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/32H01S5/343H01S5/02
CPCH01S5/0202H01S5/1085H01S5/3202H01S5/34333H01S5/22H01S5/320275
Inventor 田才邦彦仲山英次中山雄介冨谷茂隆
Owner SONY GRP CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com